A stacked packaging structure can include: a lead frame; a die located on a first surface of the lead frame; an electrical interconnection structure located above the die and configured to be electrically connected with corresponding electrodes of the die; a diode located on the electrical interconnection structure; and where a lower surface of the diode is electrically connected to the electrical interconnection structure, and the electrode on an upper surface of the diode is connected to the corresponding pins of the lead frame.

A semiconductor device includes: a substrate; a device region provided in the substrate; a terminal covering the device region in a plan view; a plurality of pseudo-bumps densely arranged on the terminal in a state of being opened from a wire; and at least one genuine bump arranged more sparsely than the plurality of the pseudo-bumps on the terminal in a state of being connected to the wire.

This semiconductor laser device comprises: a semiconductor laser element; a switching element connected in series to the semiconductor laser element, the switching element having a gate electrode, a drain electrode, and a source electrode; capacitors connected in parallel to the semiconductor laser element and the switching element; first drive electroconductive parts to which first terminals of the capacitors are connected; a second drive electroconductive part positioned apart from the first drive electroconductive parts; first drive connection members that connect the first drive electroconductive parts and the source electrode; and a second drive connection member that connects the second drive electroconductive part and the source electrode.

This semiconductor laser device comprises: a semiconductor laser element; a switching element connected in series to the semiconductor laser element, the switching element having a gate electrode, a drain electrode, and a source electrode; capacitors connected in parallel to the semiconductor laser element and the switching element; first drive electroconductive parts to which first terminals of the capacitors are connected; a second drive electroconductive part positioned apart from the first drive electroconductive parts; first drive connection members that connect the first drive electroconductive parts and the source electrode; and a second drive connection member that connects the second drive electroconductive part and the source electrode.

It is an object of the present invention to improve a heat radiation property of a metal wire on a semiconductor chip in a power module. A power module includes: a plurality of metal wires connected to a surface of at least one semiconductor chip; and a thermal conductive sheet having contact with the metal wire. The metal wire includes: at least one first metal wire connecting a surface of the semiconductor chip and a circuit pattern and at least one second metal wire connecting two points on the surface of the semiconductor chip and having the same potential as the first metal wire. The thermal conductive sheet includes a graphite sheet, and a sheet surface of the thermal conductive sheet has contact with the at least one first metal wire and the at least one second metal wire.

A semiconductor light emitting device includes a main lead, a sub lead, a semiconductor light emitting element bonded to the main lead, and a protective element bonded to the sub lead, wherein the semiconductor light emitting element is connected to the main lead and the sub lead via a first wire and a second wire, respectively, wherein the protective element has a main surface electrode and a back surface electrode which is connected to the sub lead via a conductive bonding material, and wherein the main surface electrode of the protective element is connected to the main lead via a third wire, a connecting wiring which connects electrodes of the semiconductor light emitting element, and a connecting member including the second wire.

A semiconductor package includes: a redistribution substrate; a frame including first and second vertical connection conductors, and having a through-hole; first and second semiconductor chips; an encapsulant; a second redistribution structure disposed on the encapsulant, a conductive wire electrically connecting the second semiconductor chip and the second vertical connection conductor; and a vertical connection via penetrating a portion of the encapsulant, and electrically connecting the second redistribution structure and the first vertical connection conductor. The first semiconductor chip is connected to the second vertical connection conductor by the first redistribution structure.

A method including stacking a number of silicon dice such that one or more edges of the dice are in vertical alignment, where the one or more edges include a number of connection pads. The method also includes positioning a connecting wire on a substantially perpendicular axis to the one or more edges. The connecting wire includes a number of solder blocks formed thereon. The solder blocks are spaced at intervals associated with a distance between a first set of aligned connection pads on the dice. The connecting wire is positioned such that the solder blocks are in contact with the first set of aligned connection pads. The method also includes applying heat to cause the solder blocks to reflow and physically and electrically couple the connecting wire to the connection pads.

A method including stacking a number of silicon dice such that one or more edges of the dice are in vertical alignment, where the one or more edges include a number of connection pads. The method also includes positioning a connecting wire on a substantially perpendicular axis to the one or more edges. The connecting wire includes a number of solder blocks formed thereon. The solder blocks are spaced at intervals associated with a distance between a first set of aligned connection pads on the dice. The connecting wire is positioned such that the solder blocks are in contact with the first set of aligned connection pads. The method also includes applying heat to cause the solder blocks to reflow and physically and electrically couple the connecting wire to the connection pads.

A radio frequency transceiver integrated circuit front end chip and package with integrated harmonic filter is designed to present a 50 Ohm impedance to the integrated circuit. The harmonic filter is connected to the antenna with a bond wire inside the package. The device provides reduced size and cost associated with transceiver circuits that are fabricated in CMOS technology and applied as standalone devices.