A chip package structure and an electronic equipment may reduce probability of short circuit failure during chip packaging and improve chip reliability. The chip package structure includes: a chip, a substrate, and a lead; the chip is disposed above the substrate; wherein the chip includes a pin pad and a test metal key, and the lead is configured to electrically connect the pin pad and the substrate; the test metal key is disposed in an edge region of the chip that is not under the lead.

In a RC-IGBT chip, an anode electrode film and an emitter electrode film are arranged with a distance therebetween. The anode electrode film and the emitter electrode film are electrically connected by a wiring conductor having an external impedance and an external impedance. The external impedance and the external impedance include the resistance of the wiring conductor and the inductance of the wiring conductor.

A power semiconductor device includes a frame, a semiconductor element, a substrate, and a sealing resin. The semiconductor element is disposed on the frame. The substrate is disposed on a side of the frame opposite to a side on which the semiconductor element is disposed. The sealing resin seals the semiconductor element and the substrate. The substrate includes a metal sheet, a first insulating sheet on one main surface side of the metal sheet, and a second insulating sheet on the other main surface side of the metal sheet. The metal sheet has flexibility at a normal temperature.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

An isolated power chip based on wafer level packaging, including: an RDL-based micro-transformer, where a primary coil of the RDL-based micro-transformer is connected to a direct-current power supply and configured to output a direct-current voltage input by the direct-current power supply; a transmitting chip connected to the primary coil of the RDL-based micro-transformer, and configured to receive the direct-current voltage, convert the direct-current voltage into an alternating current signal, and transmit the alternating current signal to a secondary coil of the RDL-based micro-transformer; and a receiving chip connected to the secondary coil of the RDL-based micro-transformer, and configured to convert the alternating current signal into a direct-current signal, generate a control signal for stabilizing the output voltage according to a change of a load, and encode the control signal for digital isolation. The present disclosure further provides a method of manufacturing an isolated power chip based on wafer level packaging.

A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

A lead frame is provided with a die pad portion, a first lead portion, a second lead portion, and an extension portion extending from a corner portion neighborhood of the die pad portion to the outside of the die pad portion. The first lead portion has a first terminal portion and a first lead post portion positioned on a side closer to the die pad portion relative to the first terminal portion and electrically connected to the first terminal portion. The second lead portion has a second terminal portion, a third terminal portion positioned between the first terminal portion and the second terminal portion, and a second lead post portion positioned on a side closer to the die pad portion relative to the second terminal portion and the third terminal portion and electrically connected to the second terminal portion and the third terminal portion.

A semiconductor device includes the following elements. A chip has a main surface substantially parallel with a plane defined by first and second directions intersecting with each other. A power amplifier amplifies an input signal and outputs an amplified signal from plural output terminals. First and second filter circuits attenuate harmonics of the amplified signal. The first filter circuit includes a first capacitor connected between the plural output terminals and a ground. The second filter circuit includes a second capacitor connected between the plural output terminals and a ground. On the main surface of the chip, the plural output terminals are disposed side by side in the first direction, and the first capacitor is disposed on a side in the first direction with respect to the plural output terminals, while the second capacitor is disposed on a side opposite the first direction with respect to the plural output terminals.

An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.

A semiconductor device includes a signal processing circuit configured to generate an output signal, an output pad, an output line connecting the signal processing circuit to the output pad, the output signal from the signal processing circuit being output from the output pad through the output line, a shorting pad formed in the output line, a switch connected between the shorting pad and the output pad, and configured to connect the signal processing circuit to the output pad when the switch is on, and disconnect the signal processing circuit from the output pad when the switch is off, and a wiring line connecting the shorting pad to the output pad.