An amplifier includes a transistor chip including a plurality of transistor cells, a gate pad, and a drain pad, a matching substrate having a surface on which a metal pattern is formed, a terminal with a width larger than a width of the transistor chip and than a width of the matching substrate, a plurality of terminal wires connecting the terminal to the metal pattern, and a plurality of chip wires connecting the metal pattern to the transistor chip. Inter-wire distances of portions of the plurality of terminal wires connected to the metal pattern are larger than inter-wire distances between portions of the plurality of terminal wires connected to the terminal.

A semiconductor device may include a first conductor plate on which a first semiconductor element, a second semiconductor element and a first circuit board are disposed, and a plurality of first signal terminals. A size of the second semiconductor is smaller than a size of the first semiconductor element. In a plan view along a direction perpendicular to the first conductor plate, the plurality of first signal terminals is located in a first direction with respect to the first semiconductor element. The second semiconductor element and the first circuit board are located between the plurality of first signal terminals and the first semiconductor element and are arranged along a second direction that is perpendicular to the first direction. A signal pad of the first semiconductor element is connected to a corresponding one of the plurality of first signal terminals via a signal transmission path of the first circuit board.

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

A measuring device includes two sensor chips that measure a flow rate of a fluid flowing through a pipe, electrode pads extending from a temperature measuring section and from a heater, respectively, toward peripheries of the two sensor chips, and wires that are electrically connected to the electrode pads and via which a measurement signal that is output from the temperature measuring section or the heater is transmitted to outside of the sensor chips. Each of the electrode pads includes a straight portion that extends linearly from the temperature measuring section or the heater and a wide portion that is formed at a leading end of each of the electrode pads and is wider than the straight portion, and an entire surface area of the wide portion is set as a wire-bonding-allowed region, to which one of the wires is to be bonded.

A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

A semiconductor module includes block-shaped first and second lower base members provided by bonding of flat lower surfaces on an insulated circuit board and having bottomed first and second hole portions open in upper surfaces in upper portions of the first and second lower base members, tubular first and second upper slide support members inserted in the first and second hole portions in a state where at least a part of outside surfaces is in contact with inside walls of the first and second hole portions, first and second pins inserted in contact with the insides of the first and second upper slide support members, and a sealing resin sealing the first and second pins except for the upper portions of the first and second pins.

A manufacturing method of a semiconductor device includes a step of preparing a test object including a body for sealing a semiconductor chip and a lead terminal, a step of preparing a test socket including a first contact pin, and a step of electrically testing the semiconductor chip by contacting the first contact pin with the lead terminal. The lead terminal includes a lead upper surface located on an upper surface side of the body and a lead bottom surface located on an bottom surface side of the body. The lead terminal includes a protruding portion protruding from the body, and a connecting portion. The lead terminal further includes a bending portion that connects the protruding portion and the connecting portion. Then, in the electrical test step, the first contact pin is contacted with the lead bottom surface of the protruding portion.

A measuring device includes two sensor chips that measure a flow rate of a fluid flowing through a pipe, electrode pads extending from a temperature measuring section and from a heater, respectively, toward peripheries of the two sensor chips, and wires that are electrically connected to the electrode pads and via which a measurement signal that is output from the temperature measuring section or the heater is transmitted to outside of the sensor chips. Each of the electrode pads includes a straight portion that extends linearly from the temperature measuring section or the heater and a wide portion that is formed at a leading end of each of the electrode pads and is wider than the straight portion, and an entire surface area of the wide portion is set as a wire-bonding-allowed region, to which one of the wires is to be bonded.

A semiconductor device includes a first insulating material, a first conductor pattern provided on an upper surface of the first insulating material, a second conductor pattern provided on a lower surface of the first insulating material, a semiconductor element bonded to an upper surface of the first conductor pattern by a first bonding material, and a first base plate bonded to a lower surface of the second conductor pattern by a second bonding material, in which a ratio .sub.1/D.sub.1 satisfies .sub.1/D.sub.13510.sup.4W/(m.sup.2K) where .sub.1 represents thermal conductivity of the first insulating material and D.sub.1 represents a thickness of the first insulating material, solidus temperature of the first bonding material is equal to or higher than solidus temperature of the second bonding material, and a difference between the solidus temperature of the first bonding material and the solidus temperature of the second bonding material is within 40 C.