A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A semiconductor device includes an integrated circuit die having bond pads and a bond wires. The bond wires are connected to respective ones of the bond pads by a ball bond. An area of contact between the ball bond and the bond pad has a predetermined shape that is non-circular and includes at least one axis of symmetry. A ratio of the ball bond length to the ball bond width may be equal to a ratio of the bond pad length to the bond pad width.

A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

In order to inhibit forming cracks under a pad opening during ball bonding without increasing a chip size, a protective film includes a pad opening that exposes a part of a topmost layer metal film of the chip. A second metal film provided under the pad opening has a ring shape that defines a rectangular opening under the pad opening. The opening edge of the opening in the second metal film extends inwardly beyond the edge of the overlying pad opening. Vias connect the second metal film and the topmost layer metal film, and all of these vias are located outside the pad opening in plan view.

An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

An electronic device includes an electronic element, and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The main component of the bonding pad is Al. A metal is mixed in the wire, and the mixed metal is one of Pt, Pd and Au.

In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation produced by a device within a first die from affecting an image sensing element within a second die. The IC structure has a first IC die with one or more semiconductor devices and a second IC die with an array of image sensing elements. A hybrid bonding interface region is arranged between the first and second IC die. A conductive bonding structure is arranged within the hybrid bonding interface region and is configured to electrically couple the first IC die to the second IC die. A conductive blocking structure is arranged within the hybrid bonding interface region and extends laterally between the one or more semiconductor devices and the array of image sensing elements.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

In some embodiments, the present disclosure relates to a method of forming an integrated chip (IC) structure. The method may be performed by forming a first integrated chip die having one or more semiconductor devices within a first substrate, and forming a passivation layer over the first integrated chip die. The passivation layer is selectively etched to form interior sidewalls defining a first opening, and a conductive material is deposited over the passivation layer and within the first opening. The conductive material is patterned to define a conductive blocking structure that laterally extends past the one or more semiconductor devices in opposing directions. The first integrated chip die is bonded to a second integrated chip die having an array of image sensing elements within a second substrate.