H01L2224/48451

SEMICONDUCTOR DEVICE
20250309178 · 2025-10-02 ·

A semiconductor device includes a first semiconductor element, a second semiconductor element, a first lead, a second lead, a first wire, and a first bump-stacked body. The first lead is electrically connected to the first semiconductor element. The second lead is electrically connected to the second semiconductor element and is separated from the first lead. The first wire electrically connects the first semiconductor element and the second semiconductor element. The bump-stacked body includes a plurality of bumps stacked in a thickness direction of the first semiconductor element. The first wire includes a first end overlapping with the first semiconductor element and a second end overlapping with the second semiconductor element in the thickness direction. The first bump-stacked body is located between the first semiconductor element and the first end or between the second semiconductor element and the second end.

Wire bonding apparatus, method for manufacture of semiconductor device, and semiconductor device
12417997 · 2025-09-16 · ·

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
20250372567 · 2025-12-04 · ·

A semiconductor device according to the present embodiment includes a first pad, a second pad, a third pad, a first bonding wire joined to the first pad, a second bonding wire provided on the second pad with a second stud bump in between, and a third bonding wire joined to the third pad. The second pad is positioned between the first and third pads. The second bonding wire includes a second ball portion and a second wire portion, the second ball portion being joined to the second stud bump, the second wire portion extending from the second ball portion.