A curable resin composition having high transparency in the UV region, UV resistance and heat resistance. The curable resin composition includes an alkoxy oligomer represented by Formula 1 of (R.sup.1R.sup.2R.sup.3SiO.sub.1/2).sub.w(R.sup.4R.sup.5SiO.sub.2/2).sub.x(R.sup.6SiO.sub.3/2).sub.y(SiO.sub.4/2).sub.z and a curing catalyst. The curing catalyst is phosphoric acid present in an amount of 3-30 parts by weight based on 100 parts by weight of the alkoxy oligomer, or alkoxide of at least one metal selected from the group consisting of B, Al, P, Sc, Ga, Y, Zr, Nb, In, Sn, La, Gd, Dy, Yb, Hf, Ta and W, present in an amount of 0.5-20 parts by weight based on 100 parts by weight of the alkoxy oligomer. Each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 independently represents the same or a different organic group, w, x, y and z are 0 or positive numbers satisfying the relationship of w+x+y+z=1, and the atomic ratio of O/Si is 2.3-3.5.

A street lamp includes a light emitter that is disposed at a height of at least 5 m and at most 15 m above a road and emits white light to illuminate the road. The white light has: a correlated color temperature in a range from 5000 K to 6500 K; a chromaticity deviation in a range from −10 to +10; a scotopic/photopic (S/P) ratio of at least 2.0, the S/P ratio being a ratio of a scotopic luminous flux to a photopic luminous flux; and an average horizontal illuminance of at least 5 lx at an illumination area on the road illuminated with the white light.

A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

A light-emitting device package and a lighting apparatus including the light-emitting device package are provided. The light-emitting device package may include a body, a light-emitting device provided on the body, a phosphor layer provided on the body and the light-emitting device, and a lens provided on the phosphor layer that refracts and reflects light discharged from the light-emitting device and having a lens body. The lens body may include a side portion, a recess having a curved surface and provided at a center of an upper surface of the lens body, and an edge portion having a convex rounded shape and provided between the recess and the side portion.

A semiconductor package is provided, including: a substrate; a first semiconductor element disposed on the substrate and having a first conductive pad grounded to the substrate; a conductive layer formed on the first semiconductor element and electrically connected to the substrate; a second semiconductor element disposed on the first semiconductor element through the conductive layer; and an encapsulant formed on the substrate and encapsulating the first and second semiconductor elements. Therefore, the first and second semiconductor elements are protected from electromagnetic interference (EMI) shielding with the conductive layer being connected to the grounding pad of the substrate. A fabrication method of the semiconductor package is also provided.

The invention relates to methods of producing a cap substrate, to methods of producing a packaged radiation-emitting device at the wafer level, and to a radiation-emitting device. By producing a cap substrate, providing a device substrate in the form of a wafer including a multitude of radiation-emitting devices, arranging the substrates one above the other such that the substrates are bonded along an intermediate bonding frame, and dicing the packaged radiation-emitting devices, improved packaged radiation-emitting devices are provided which are advantageously arranged within a cavity free from organics and can be examined, still at the wafer level, in terms of their functionalities in a simplified manner prior to being diced.

The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate, and a method for manufacturing the supporting substrate, in which the method includes: providing a first substrate having a first face and a second face opposite to the first face; forming a groove in the first substrate in a direction from the first face to the second face; forming a conducting part in the groove; bonding a second substrate to the first face of the first substrate; and forming, on the second face, a first conducting pad to be in electrical communication with the conducting part.

A Light Emitting Diode (LED) light includes a bridge rectifier configured to be powered by an alternating current power source and to produce a rectified output. Control circuitry couples to the bridge rectifier and is configured to produce a shunt signal when the rectified output is less than a threshold voltage. A series connected Light Emitting Diode (LED) string includes a first group of LEDs and a second group of LEDs. A switch couples to a first side of the second group of LEDs and is controlled by the shunt signal to deactivate the second group of LEDs. The control circuitry may include a ratio metric series resistor string configured to sense a proportion of the rectified output and an inverter configured to generate the shunt signal based on the proportion of the rectified output.

A light emitting element includes: a sapphire substrate having a front surface and a rear surface opposite the front surface; a first conductive type semiconductor layer stacked on the front surface of the sapphire substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; a reflective layer which contains Ag and is disposed on the rear surface of the sapphire substrate, the reflective layer reflecting light from the sapphire substrate toward the front surface of the sapphire substrate; and an adhesive layer which is interposed between the sapphire substrate and the reflective layer and is made of ITO, the adhesive layer being adhered to the reflective layer.

A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 μm and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.