Patent classifications
H01L2224/75303
Apparatus to control transfer parameters during transfer of semiconductor devices
An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.
Systems for direct transfer of semiconductor device die
A system for performing a direct transfer of a semiconductor device die includes a first conveyance mechanism to convey a first substrate, and a second conveyance mechanism to convey a second substrate with respect to the first substrate. The first substrate includes a first side and a second side, and the semiconductor device die is disposed on the first side of the first substrate. The second conveyance mechanism includes a first portion and a second portion to clamp the second substrate adjacent to a first side of the first substrate. The first portion of the second conveyance mechanism has a concave shape and the second portion of the second conveyance mechanism has a convex counter shape corresponding to the concave shape of the first portion. The system also includes a transfer mechanism disposed adjacent to the first conveyance mechanism to effectuate the direct transfer.
Direct transfer of semiconductor devices from a substrate
A method includes loading a wafer tape into a first frame, the wafer tape having a first side and a second side, a first semiconductor device die being disposed on the first side of the wafer tape. A substrate is loaded into a second frame, the substrate including a second semiconductor device die onto which the first semiconductor device die is to be transferred. A needle is oriented to a position adjacent to the second side of the wafer tape, the needle extending in a direction toward the wafer tape, and a needle actuator connected to the needle is activated to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.
Chip bonding apparatus and method of manufacturing semiconductor device using the apparatus
A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.
Method for improved transfer of semiconductor die
A system to effectuate improved transfer of semiconductor die. A first frame secures a first substrate having the semiconductor die. A second frame secures a second substrate adjacent the first substrate. A needle is disposed adjacent to the first frame. The needle includes: a longitudinal surface extending in a direction toward the second frame, and a base end having a cross-sectional dimension being based, at least in part, on a cross-sectional dimension of the semiconductor die. A needle actuator is operably connected to the needle and is configured to actuate the needle such that, during the transfer operation, when the first substrate is secured in the first frame and the second substrate is secured in the second frame, the needle presses the semiconductor die into contact with the second substrate so as to transfer the semiconductor die onto the second substrate.
System and method for uniform pressure gang bonding
A uniform pressure gang bonding device and fabrication method are presented using an expandable upper chamber with an elastic surface. Typically, the elastic surface is an elastomer material having a Young's modulus in a range of 40 to 1000 kilo-Pascal (kPA). After depositing a plurality of components overlying a substrate top surface, the substrate is positioned over the lower plate, with the top surface underlying and adjacent (in close proximity) to the elastic surface. The method creates a positive upper chamber medium pressure differential in the expandable upper chamber, causing the elastic surface to deform. For example, the positive upper chamber medium pressure differential may be in the range of 0.05 atmospheres (atm) and 10 atm. Typically, the elastic surface deforms between 0.5 millimeters (mm) and 20 mm, in response to the positive upper chamber medium pressure differential.
PROFILED THERMODE
The invention relates to a thermode for connecting at least two components, comprising a tip having a body portion with at least two contact surface portions connected to and spaced apart from one another by a recess configured to receive a portion of one of the at least two components; and a support portion having at least one supporting surface portion configured to support a further component (being the other of the at least two components, wherein the contact surface portions and the supporting surface portion are configured to receive the at least two components between them and wherein one or both of the contact surface portions and the supporting surface portion are moveable relative to and towards one another to exert heat and/or pressure on the at least two components located between the contact surface portions and the supporting portion.
Semiconductor chip transfer method and transfer tool
A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier
BONDING APPARATUS
The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.
THERMOCOMPRESSION BOND TIPS AND RELATED APPARATUS AND METHODS
A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.