A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

A lighting component including a plurality of die transferred to the glass substrate. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions that are movable relative to one another in a longitudinal direction. In some embodiments, the individual regions include a first region having a first outer surface, and a second region peripheral to the first region and including a second outer surface. The first region is movable in a longitudinal direction to a first position, and the second region is movable in the longitudinal direction to a second position, such that in the second position, the second outer surface of the second region extends longitudinally beyond the first outer surface of the first region. The bond chuck can be positioned proximate a substrate of a semiconductor device such that movement of the first region and/or second region affect a shape of the substrate, which thereby causes an adhesive on the substrate to flow in a lateral, predetermined direction.

A uniform pressure gang bonding device and fabrication method are presented using an expandable upper chamber with an elastic surface. Typically, the elastic surface is an elastomer material having a Young's modulus in a range of 40 to 1000 kilo-Pascal (kPA). After depositing a plurality of components overlying a substrate top surface, the substrate is positioned over the lower plate, with the top surface underlying and adjacent (in close proximity) to the elastic surface. The method creates a positive upper chamber medium pressure differential in the expandable upper chamber, causing the elastic surface to deform. For example, the positive upper chamber medium pressure differential may be in the range of 0.05 atmospheres (atm) and 10 atm. Typically, the elastic surface deforms between 0.5 millimeters (mm) and 20 mm, in response to the positive upper chamber medium pressure differential.

A joint device includes a regulation device, a heating device, and a transparent portion. The regulation device includes a support base that includes a placement surface, and a regulation member. The heating device applies heat for causing solid phase diffusion at a joint interface between the two metal members by radiating an electromagnetic beam to a beam irradiated region via the regulation member. The beam irradiated region is set on a surface of one of the two metal members that is farther from the placement surface while the regulation device regulates motion of the two metal members. The transparent portion is provided at least at a portion corresponding to the beam irradiated region of the metal member to which the electromagnetic beam is irradiated, to transmit the electromagnetic beam.

A system performs a direct transfer of a semiconductor device die from a first substrate to a second substrate. A semiconductor device die is disposed on a first side of the first substrate. The system includes a first conveyance mechanism to convey the first substrate, and a second conveyance mechanism to convey the second substrate with respect to the first substrate. The second conveyance mechanism includes a first portion and a second portion to clamp the second substrate adjacent to the first side of the first substrate. The first portion of the second conveyance mechanism has a concave shape and the second portion of the second conveyance mechanism has a convex counter shape corresponding to the concave shape of the first portion. The system also comprises a transfer mechanism disposed adjacent to the first conveyance mechanism to effectuate the direct transfer.

A bonding apparatus and method includes: a stage configured to fix a first electric component; a pressing unit configured to press a conductive adhesive film and a second electric component onto the first electric component; a driver configured to control movement of the pressing unit along a direction; and a plurality of sensors at different positions on the stage and configured to sense a change in capacitance with the pressing unit, wherein the pressing unit includes a flat metal material in first regions facing the plurality of sensors.

A transfer head, a transfer head array, and a method for transferring an inorganic light-emitting diode are provided. The transfer head for transferring an inorganic light-emitting diode includes a first groove and a second groove. The first groove and the second groove are arranged sequentially in a first direction, and are connected to each other. The first groove is configured to provide an inlet and an outlet for the inorganic light-emitting diode to enter and exit the transfer head. After the inorganic light-emitting diode enters the second groove through the first groove, at least a partial structure of the inorganic light-emitting diode is confined in the second groove. Picking up and transferring the inorganic light-emitting diode is realized by the transfer head with a simple structure.

An apparatus includes a first frame to hold a wafer tape, and a second frame to hold a substrate adjacent to the first side of the wafer tape. A needle is disposed adjacent to the second side of the wafer tape and extends in a direction toward the wafer tape. A needle actuator is connected to the needle to move the needle, during a direct transfer process, to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with a second semiconductor device die. An energy-emitting device is disposed adjacent to the substrate to induce a bond between the first semiconductor device die and the second semiconductor device die such that the first semiconductor device die is released from the wafer tape and is attached to the second semiconductor device die.