H01L2224/8048

SEMICONDUCTOR MODULE, DISPLAY DEVICE, AND SEMICONDUCTOR MODULE MANUFACTURING METHOD
20200091120 · 2020-03-19 · ·

Resin covers a side surface and a back surface of a blue LED and holds the blue LED level. An electrode is disposed between a top surface of a wiring substrate and a back surface of the blue LED, extends through the resin, and electrically connects the wiring substrate and the blue LED to each other. A light-outgoing surface (top-surface) of the blue LED is exposed without being covered with the resin, and the light-outgoing surface (top-surface) is flush with a top surface of the resin.

SEMICONDUCTOR MODULE, DISPLAY DEVICE, AND SEMICONDUCTOR MODULE MANUFACTURING METHOD
20200091120 · 2020-03-19 · ·

Resin covers a side surface and a back surface of a blue LED and holds the blue LED level. An electrode is disposed between a top surface of a wiring substrate and a back surface of the blue LED, extends through the resin, and electrically connects the wiring substrate and the blue LED to each other. A light-outgoing surface (top-surface) of the blue LED is exposed without being covered with the resin, and the light-outgoing surface (top-surface) is flush with a top surface of the resin.

Hetero-bipolar transistor and method for producing the same

A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.

Hetero-bipolar transistor and method for producing the same

A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
20170062393 · 2017-03-02 ·

A method of manufacturing a display device includes: immersing a mask including openings, in a solution; seating light-emitting diode chips respectively in the openings of the mask; arranging a first flexible substrate including first wirings thereon, below the mask, and aligning the first wirings to respectively correspond to the openings of the mask; removing from the solution, the first flexible substrate with the first wirings corresponding to the openings of the mask together with the mask with the light-emitting diode chips seated in the openings thereof; bonding the light-emitting diode chips and the first wirings to each other; providing a second flexible substrate including second wirings thereon, and aligning the second wirings to respectively correspond to the light-emitting diode chips; and bonding the light-emitting diode chips and the second wirings to each other, to form the display device.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
20170062393 · 2017-03-02 ·

A method of manufacturing a display device includes: immersing a mask including openings, in a solution; seating light-emitting diode chips respectively in the openings of the mask; arranging a first flexible substrate including first wirings thereon, below the mask, and aligning the first wirings to respectively correspond to the openings of the mask; removing from the solution, the first flexible substrate with the first wirings corresponding to the openings of the mask together with the mask with the light-emitting diode chips seated in the openings thereof; bonding the light-emitting diode chips and the first wirings to each other; providing a second flexible substrate including second wirings thereon, and aligning the second wirings to respectively correspond to the light-emitting diode chips; and bonding the light-emitting diode chips and the second wirings to each other, to form the display device.