A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A display panel including a circuit board having first pads, a plurality of light emitting devices disposed on the circuit board and having second pads, at least one of the light emitting devices including a repaired light emitting device, and a metal bonding layer bonding the first pads and the second pads, in which the metal bonding layer of the repaired light emitting device has at least one of a thickness and a composition different from that of the metal bonding layer of the remaining light emitting devices.

A display panel including a circuit board having first pads, a plurality of light emitting devices disposed on the circuit board and having second pads, at least one of the light emitting devices including a repaired light emitting device, and a metal bonding layer bonding the first pads and the second pads, in which the metal bonding layer of the repaired light emitting device has at least one of a thickness and a composition different from that of the metal bonding layer of the remaining light emitting devices.

The invention concerns an electrical connection pad (10′) for providing an electrical connection between components of an electronic system, wherein the electrical connection pad comprises: a metallic layer (12); and a laser induced periodic surface structure (20), LIPSS, formed on an external surface (16) of the electrical connection pad (10) and exposing the metallic layer (12) and a method for correspondingly laser-treating an electrical connection pad (10).

The invention concerns an electrical connection pad (10′) for providing an electrical connection between components of an electronic system, wherein the electrical connection pad comprises: a metallic layer (12); and a laser induced periodic surface structure (20), LIPSS, formed on an external surface (16) of the electrical connection pad (10) and exposing the metallic layer (12) and a method for correspondingly laser-treating an electrical connection pad (10).

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A package structure is provided. The package structure includes an interposer substrate including an insulating structure, a conductive pad, a first conducive line, and a first conductive via structure. The package structure includes an electronic device bonded to the conductive pad. The package structure includes a chip structure bonded to the first end portion of the first conductive via structure. The package structure includes a first conductive bump connected between the chip structure and the first end portion of the first conductive via structure. The first end portion protrudes into the first conductive bump and is in direct contact with the first conductive bump.

A package structure is provided. The package structure includes an interposer substrate including an insulating structure, a conductive pad, a first conducive line, and a first conductive via structure. The package structure includes an electronic device bonded to the conductive pad. The package structure includes a chip structure bonded to the first end portion of the first conductive via structure. The package structure includes a first conductive bump connected between the chip structure and the first end portion of the first conductive via structure. The first end portion protrudes into the first conductive bump and is in direct contact with the first conductive bump.

A semiconductor package structure is provided. The semiconductor package structure includes a carrier substrate, an interposer substrate, a semiconductor device, a lid, and a thermal interface material. The interposer substrate is disposed on the carrier substrate. The semiconductor device is disposed on the interposer substrate. The lid is disposed on the carrier substrate to cover the semiconductor device. The thermal interface material is disposed between the lid and the semiconductor device. A first recess is formed on a lower surface of the lid facing the semiconductor device, and the first recess overlaps the semiconductor device in a top view.