A method of transferring a micro device is provided. The method includes: aligning a transfer plate with the micro device thereon with a receiving substrate having a contact pad thereon such that the micro device is above or in contact with the contact pad; moving a combination of the transfer plate with the micro device thereon and the receiving substrate into a confined space with a relative humidity greater than or equal to about 85% so as to condense some water between the micro device and the contact pad; and attaching the micro device to the contact pad.

A method of transferring a micro device is provided. The method includes: aligning a transfer plate with the micro device thereon with a receiving substrate having a contact pad thereon such that the micro device is above or in contact with the contact pad; moving a combination of the transfer plate with the micro device thereon and the receiving substrate into a confined space with a relative humidity greater than or equal to about 85% so as to condense some water between the micro device and the contact pad; and attaching the micro device to the contact pad.

Disclosed herein are integrated circuit (IC) packages with solder thermal interface materials (STIM), as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a lid, a die between the package substrate and the lid, and a STIM between the die and the lid. The STIM may have a thickness that is less than 200 microns.

Disclosed herein are integrated circuit (IC) packages with solder thermal interface materials (STIM), as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a lid, a die between the package substrate and the lid, and a STIM between the die and the lid. The STIM may have a thickness that is less than 200 microns.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed herein are integrated circuit (IC) packages with asymmetric adhesion material regions, as well as related methods and devices. For example, in some embodiments, an IC package may include a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package. The lid of the IC package may include an adhesion material region, in contact with the STIM, that is asymmetric with respect to the die.

Disclosed herein are integrated circuit (IC) packages with asymmetric adhesion material regions, as well as related methods and devices. For example, in some embodiments, an IC package may include a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package. The lid of the IC package may include an adhesion material region, in contact with the STIM, that is asymmetric with respect to the die.

Disclosed herein are integrated circuit (IC) packages with thermal interface materials (TIMs) with different material compositions, as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a die, and TIM, wherein the die is between the TIM and the package substrate along a vertical axis. The TIM may include a first TIM having a first material composition and a second TIM having a second material composition; the first material composition may be different than the second material composition, and the first TIM and the second TIM may be in different locations along a lateral axis perpendicular to the vertical axis.

Disclosed herein are integrated circuit (IC) packages with thermal interface materials (TIMs) with different material compositions, as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a die, and TIM, wherein the die is between the TIM and the package substrate along a vertical axis. The TIM may include a first TIM having a first material composition and a second TIM having a second material composition; the first material composition may be different than the second material composition, and the first TIM and the second TIM may be in different locations along a lateral axis perpendicular to the vertical axis.