A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.

A manufacturing method of a package includes at least the following steps. Contact vias are embedded in a semiconductor carrier. The contact vias are electrically grounded. A first die and a first encapsulant are provided over the semiconductor carrier. The first encapsulant encapsulates the first die. First through insulating vias (TIV) are formed aside the first die. The first TIVs are electrically grounded through the contact vias. The first die, the first encapsulant, and the first TIVs are grinded. A second die is stacked over the first die.

A manufacturing method of a package includes at least the following steps. Contact vias are embedded in a semiconductor carrier. The contact vias are electrically grounded. A first die and a first encapsulant are provided over the semiconductor carrier. The first encapsulant encapsulates the first die. First through insulating vias (TIV) are formed aside the first die. The first TIVs are electrically grounded through the contact vias. The first die, the first encapsulant, and the first TIVs are grinded. A second die is stacked over the first die.

A package includes a first die, a second die, a first encapsulant, first through insulating vias (TIV), second encapsulant, and second TIVs. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The first TIVs are aside the first die. The first TIVs penetrate through the first encapsulant and are electrically floating. The second encapsulant laterally encapsulates the second die. The second TIVs are aside the second die. The second TIVs penetrate through the second encapsulant and are electrically floating. The second TIVs are substantially aligned with the first TIVs.

A package includes a first die, a second die, a first encapsulant, first through insulating vias (TIV), second encapsulant, and second TIVs. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The first TIVs are aside the first die. The first TIVs penetrate through the first encapsulant and are electrically floating. The second encapsulant laterally encapsulates the second die. The second TIVs are aside the second die. The second TIVs penetrate through the second encapsulant and are electrically floating. The second TIVs are substantially aligned with the first TIVs.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

A package structure includes a package substrate, an interposer module, a package lid, and a heat dissipation structure between the interposer module and the package lid, including a thermal interface material (TIM) layer, and a metal barrier layer between the TIM layer and at least one of the interposer module or the package lid, and configured to inhibit formation of an intermetallic compound (IMC) layer. A method of making the package structure includes forming a metal barrier layer comprising Cu (111) on at least one of an interposer module or a package lid, attaching the interposer module, forming a thermal interface material (TIM) layer over the interposer module, and attaching the package lid to the package substrate so that the interposer module, the TIM layer and the metal barrier layer are disposed between the package lid and the package substrate, and the metal barrier layer contacts the TIM layer.

A package includes a carrier substrate, a first die, and a second die. The first die and the second die are stacked on the carrier substrate in sequential order. The first die includes a first bonding layer, a second bonding layer, and an alignment mark embedded in the first bonding layer. The second die includes a third bonding layer. A surface of the first bonding layer form a rear surface of the first die and a surface of the second bonding layer form an active surface of the first die. The rear surface of the first die is in physical contact with the carrier substrate. The active surface of the first die is in physical contact with the third bonding layer of the second die.