A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.