Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.

A semiconductor includes a semiconductor element, a connecting terminal electrically connected to the semiconductor element, and a case including an opening space for housing the semiconductor element, a frame which surrounds the opening space and in which the connecting terminal is partially embedded, and a terminal arrangement portion protruding from the frame towards the opening space. The connecting terminal includes an internal terminal portion that extends towards the opening space with respect to the frame, the internal terminal portion having a front surface that is electrically connected to the semiconductor element and exposed to the opening space, and a rear surface that is fixed to the terminal arrangement portion.

A semiconductor includes a semiconductor element, a connecting terminal electrically connected to the semiconductor element, and a case including an opening space for housing the semiconductor element, a frame which surrounds the opening space and in which the connecting terminal is partially embedded, and a terminal arrangement portion protruding from the frame towards the opening space. The connecting terminal includes an internal terminal portion that extends towards the opening space with respect to the frame, the internal terminal portion having a front surface that is electrically connected to the semiconductor element and exposed to the opening space, and a rear surface that is fixed to the terminal arrangement portion.

A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.

A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.

A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.

A method of making a micro-transfer printed structure includes providing a destination substrate and a source substrate having one or more micro-transfer printable components. A layer of volatile adhesive is formed over the destination substrate and one or more components are micro-transfer printed from the source substrate onto the volatile adhesive layer at a non-evaporable temperature of the volatile adhesive layer. The volatile adhesive layer is then heated to an evaporation temperature to evaporate at least a portion of the volatile adhesive after micro-transfer printing. In certain embodiments, a micro-transfer printed structure includes a destination substrate having one or more metal contacts and one or more micro-transfer printable components having one or more component contacts disposed on the destination substrate with the metal contact aligned with the component contact. The metal contact can form an intermetallic bond with the component contact.