Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a substrate, a semiconductor chip on the substrate, and a molding layer. The semiconductor chip includes a circuit region and an edge region around the circuit region. The molding layer covers a sidewall of the semiconductor chip. The semiconductor chip includes a reforming layer on the edge region. A top surface of the reforming layer is coplanar with a top surface of the molding layer.

Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a substrate, a semiconductor chip on the substrate, and a molding layer. The semiconductor chip includes a circuit region and an edge region around the circuit region. The molding layer covers a sidewall of the semiconductor chip. The semiconductor chip includes a reforming layer on the edge region. A top surface of the reforming layer is coplanar with a top surface of the molding layer.

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

A semiconductor device package includes a substrate, a heat-generating component positioned on a surface of the substrate, and an encapsulant at least partially covering the heat-generating component and having an outer surface. A first heat-conducting layer is disposed between the encapsulant and the first heat-generating component. One or more pillars are in contact with the first heat-conducting layer and extend to the outer surface of the encapsulant and contact a second heat-conducting layer disposed on the outer surface of the encapsulant.

A semiconductor device package includes a substrate, a heat-generating component positioned on a surface of the substrate, and an encapsulant at least partially covering the heat-generating component and having an outer surface. A first heat-conducting layer is disposed between the encapsulant and the first heat-generating component. One or more pillars are in contact with the first heat-conducting layer and extend to the outer surface of the encapsulant and contact a second heat-conducting layer disposed on the outer surface of the encapsulant.

In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.