A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is on the substrate. The bonding layer is on the conductive pad. A thickness of the bonding layer ranges from about 0.2 m to about 2 m. The micro device is on the bonding layer. The diffusive bonding portion is between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.

A bonded structure is a structure in which two bonding target members and a bonding portion formed between and adjacent to the bonding target members are bonded together. The bonding portion is made of a material mainly containing copper. In a cross section of the bonded structure taken along a thickness direction, a ratio of a bonded rate between the bonding target members and the bonding portion in a peripheral region of the bonded structure to a bonded rate between the bonding target members and the bonding portion in a central region of the bonded structure is from 0.6 to 0.9. The bonded rate is 0.3 or more.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes under the plurality of semiconductor layers; a first lead frame disposed under a first electrode of the light emitting chip; a second lead frame disposed under a second electrode of the light emitting chip; a protective chip disposed between the first and second lead frames and electrically connected to the first and second electrodes; and a reflective member disposed on a periphery of the light emitting chip and the first and second lead frames.

A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes under the plurality of semiconductor layers; a first lead frame disposed under a first electrode of the light emitting chip; a second lead frame disposed under a second electrode of the light emitting chip; a protective chip disposed between the first and second lead frames and electrically connected to the first and second electrodes; and a reflective member disposed on a periphery of the light emitting chip and the first and second lead frames.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A semiconductor assembly includes a semiconductor die comprising lower and upper electrical contacts. A lead frame having a lower die pad is electrically and mechanically connected to the lower electrical contact of the die. An upper conductive member has a first portion electrically and mechanically connected to the upper electrical contact of the die. A lead terminal has a surface portion electrically and mechanically connected to a second portion of the conductive member. The surface portion of the lead terminal and/or the second portion of the conductive member has a series of grooves disposed therein. Packaging material encapsulates the semiconductor die, at least a portion of the lead frame, at least a portion of the upper conducive member and at least a portion of the lead terminal.

A semiconductor assembly includes a semiconductor die comprising lower and upper electrical contacts. A lead frame having a lower die pad is electrically and mechanically connected to the lower electrical contact of the die. An upper conductive member has a first portion electrically and mechanically connected to the upper electrical contact of the die. A lead terminal has a surface portion electrically and mechanically connected to a second portion of the conductive member. The surface portion of the lead terminal and/or the second portion of the conductive member has a series of grooves disposed therein. Packaging material encapsulates the semiconductor die, at least a portion of the lead frame, at least a portion of the upper conducive member and at least a portion of the lead terminal.