A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

An electronic device includes a substrate, a first pad disposed on the substrate and having a first conductive layer and a second conductive layer disposed on the first conductive layer, a first insulating layer disposed on the first conductive layer and having at least one opening exposing a portion of the first conductive layer, and a second pad disposed opposite to the first pad. The second conductive layer is disposed on the first conductive layer in the at least one opening and extends over the at least one opening to be disposed on a portion of the insulating layer. A bottom of the least one opening of the first insulating layer has an arc edge in a top view of the electronic device.

A package structure is provided. The package structure includes a die, a lead frame, and a conductive glue. The lead frame includes a die pad and a retaining wall structure. The die pad is configured to support the die, and the retaining wall structure surrounds the die. The conductive glue is disposed between the die and the lead frame.

A package structure is provided. The package structure includes a die, a lead frame, and a conductive glue. The lead frame includes a die pad and a retaining wall structure. The die pad is configured to support the die, and the retaining wall structure surrounds the die. The conductive glue is disposed between the die and the lead frame.

Provided is a composition for conductive adhesive. The composition for conductive adhesive includes a heterocyclic compound containing oxygen and including at least one of an epoxy group or oxetane group, a reductive curing agent including an amine group and a carboxyl group, and a photoinitiator, wherein a mixture ratio of the heterocyclic compound and the reductive curing agent satisfies Conditional Expression 1 below.

0.5≤(b+c)/a≤1.5, a>0, b≥0, c>0  [Conditional Expression 1] where ‘a’ denotes a mole number of a heterocycle in the heterocyclic compound, ‘b’ denotes a mole number of hydrogen bonded to a nitrogen atom of the amine group included in the reductive curing agent, and ‘c’ denotes a mole number of the carboxyl group.