One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

A vibrator device has a base that has a first terminal, a circuit element that is disposed on the base and has a second terminal, a vibrator that includes a vibrator element and a vibrator element package, and is positioned between the first terminal and the second terminal in plan view of the base, a wiring unit that is disposed on the vibrator, a first wire that electrically connects the first terminal and the wiring unit together, and a second wire that electrically connects the wiring unit and the second terminal together.

A vibrator device has a base that has a first terminal, a circuit element that is disposed on the base and has a second terminal, a vibrator that includes a vibrator element and a vibrator element package, and is positioned between the first terminal and the second terminal in plan view of the base, a wiring unit that is disposed on the vibrator, a first wire that electrically connects the first terminal and the wiring unit together, and a second wire that electrically connects the wiring unit and the second terminal together.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

A vibrator device has a base that has a first terminal, a circuit element that is disposed on the base and has a second terminal, a vibrator that includes a vibrator element and a vibrator element package, and is positioned between the first terminal and the second terminal in plan view of the base, a wiring unit that is disposed on the vibrator, a first wire that electrically connects the first terminal and the wiring unit together, and a second wire that electrically connects the wiring unit and the second terminal together.

A vibrator device has a base that has a first terminal, a circuit element that is disposed on the base and has a second terminal, a vibrator that includes a vibrator element and a vibrator element package, and is positioned between the first terminal and the second terminal in plan view of the base, a wiring unit that is disposed on the vibrator, a first wire that electrically connects the first terminal and the wiring unit together, and a second wire that electrically connects the wiring unit and the second terminal together.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.