H01L2224/8348

Lids for integrated circuit packages with solder thermal interface materials

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Micro LED display and manufacturing method with conductive film

A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

Micro LED display and manufacturing method with conductive film

A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.

PACKAGE AND SEMICONDUCTOR DEVICE
20220278149 · 2022-09-01 ·

A package comprising a base is provided. An electrode and a concave portion are arranged on a first surface of the package. The base comprises a second surface on a side opposite to the first surface and a third surface. The first surface is positioned between the second and third surfaces. The electrode comprises an electrode upper surface and an electrode side surface. The concave portion comprises a concave side surface and a bottom surface positioned closer to the second surface than the concave side surface. The electrode upper surface is arranged at a position further away from the virtual plane than the bottom surface. The electrode side surface is continuous with the concave side surface. The concave portion further comprises a second side surface which faces the concave side surface and is continuous with the third surface.

PACKAGE AND SEMICONDUCTOR DEVICE
20220278149 · 2022-09-01 ·

A package comprising a base is provided. An electrode and a concave portion are arranged on a first surface of the package. The base comprises a second surface on a side opposite to the first surface and a third surface. The first surface is positioned between the second and third surfaces. The electrode comprises an electrode upper surface and an electrode side surface. The concave portion comprises a concave side surface and a bottom surface positioned closer to the second surface than the concave side surface. The electrode upper surface is arranged at a position further away from the virtual plane than the bottom surface. The electrode side surface is continuous with the concave side surface. The concave portion further comprises a second side surface which faces the concave side surface and is continuous with the third surface.

ELECTRONIC DEVICE
20220084982 · 2022-03-17 · ·

An electronic device includes a substrate, a first pad disposed on the substrate and having a first conductive layer and a second conductive layer disposed on the first conductive layer, a first insulating layer disposed on the first conductive layer and having at least one opening exposing a portion of the first conductive layer, and a second pad disposed opposite to the first pad. The second conductive layer is disposed on the first conductive layer in the at least one opening and extends over the at least one opening to be disposed on a portion of the insulating layer. A bottom of the least one opening of the first insulating layer has an arc edge in a top view of the electronic device.

Semiconductor device
11133271 · 2021-09-28 · ·

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.

Semiconductor device
11133271 · 2021-09-28 · ·

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.