An integrated circuit assembly may be formed comprising an electronic substrate, a first and second integrated circuit device each having a first surface, a second surface, at least one side extending between the first and second surface, and an edge defined at an intersection of the second surface and the at least one side of each respective integrated circuit device, wherein the first surface of each integrated circuit device is electrically attached to the electronic substrate, an underfill material between the first surface of each integrated circuit device and the electronic substrate, and between the sides of the first and second integrated circuit devices, and at least one barrier structure adjacent at least one of the edge of first integrated circuit device and the edge of the second integrated circuit device, wherein the underfill material abuts the at least one barrier structure.

An integrated circuit assembly may be formed comprising an electronic substrate, a first and second integrated circuit device each having a first surface, a second surface, at least one side extending between the first and second surface, and an edge defined at an intersection of the second surface and the at least one side of each respective integrated circuit device, wherein the first surface of each integrated circuit device is electrically attached to the electronic substrate, an underfill material between the first surface of each integrated circuit device and the electronic substrate, and between the sides of the first and second integrated circuit devices, and at least one barrier structure adjacent at least one of the edge of first integrated circuit device and the edge of the second integrated circuit device, wherein the underfill material abuts the at least one barrier structure.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

Provided is a package structure including a bottom die, a top die, an insulating layer, a circuit substrate, a dam structure, and an underfill. The top die is bonded on a front side of the bottom die. The insulating layer is disposed on the front side of the bottom die to laterally encapsulate a sidewall of the top die. The circuit substrate is bonded on a back side of the bottom die through a plurality of connectors. The dam structure is disposed between the circuit substrate and the back side of the bottom die, and connected to the back side of the bottom die. The underfill laterally encapsulates the connectors and the dam structure. The dam structure is electrically isolated from the circuit substrate by the underfill. A method of forming the package structure is also provided.

Provided is a package structure including a bottom die, a top die, an insulating layer, a circuit substrate, a dam structure, and an underfill. The top die is bonded on a front side of the bottom die. The insulating layer is disposed on the front side of the bottom die to laterally encapsulate a sidewall of the top die. The circuit substrate is bonded on a back side of the bottom die through a plurality of connectors. The dam structure is disposed between the circuit substrate and the back side of the bottom die, and connected to the back side of the bottom die. The underfill laterally encapsulates the connectors and the dam structure. The dam structure is electrically isolated from the circuit substrate by the underfill. A method of forming the package structure is also provided.