A second lead frame is set onto a conductive layer and a busbar. The second lead frame has holes previously formed at opposite ends thereof, and pieces of solder material or solder pieces are inserted into the holes. Then, the solder pieces are vibrated by an ultrasonically vibrating tool, whereby the solder pieces are melted without having a high temperature. The second lead frame is thus bonded to the conductive layer and the busbar. A semiconductor element and the busbar are connected by a first lead frame and the second lead frame. The connection structure thereof is such that the second lead frame to be bonded by ultrasonic bonding or other bonding methods is not directly in contact with the semiconductor element, which eliminates the risk of damage to the semiconductor element.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Electrode pads disposed on a first surface of a semiconductor element include a first pad located close to a corner and a second pad located apart from the corner compared with the first pad. A first wire connected to the first pad has a smaller Young's modulus than a second wire connected to the second pad. A thickness of an intermetallic compound layer formed by the first wire and the first pad is larger than a thickness of an intermetallic compound layer formed by the second wire and the second pad.

Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.

Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

A wire bonding apparatus connecting a lead of a mounted member with an electrode of a semiconductor die through a wire comprises a capillary through which the wire is inserted, a shape acquisition part which acquires the shape of the lead to which the wire is connected, a calculating part which calculates an extending direction of a wire tail extending from the end of the capillary based on the shape of a lead to which the wire is connected next, and a cutting part which moves the capillary in the extending direction and cuts the wire to form the wire tail after the lead is connected with the electrode through the wire. Thus, in the wire bonding using wedge bonding, joining part tails (183a, 283a, 383a) formed in continuation to a first bonding point can be prevented from coming into contact with each other.