Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. ##STR00001##

A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous Al.sub.1-xSi.sub.xO layer with 0.2<x<0.8; and a gate electrode over the gate insulator, the gate electrode being positioned between the source and drain contacts.

The first gate insulating film is an insulating film made of silicon oxide, and to which hafnium (Hf) is added without addition of aluminum (Al). Also, the second gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added without addition of hafnium. The third gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added. Further, the fourth gate insulating film is an insulating film made of silicon oxide, and to which hafnium is added. Accordingly, it is possible to reduce the power consumption of the semiconductor device.

An example embodiment of the present disclosure involves a method for semiconductor device fabrication. The method comprises providing a structure that includes a conductive component and an interlayer dielectric (ILD) that includes silicon and surrounds the conductive component, and forming, over the conductive component and the ILD, an etch stop layer (ESL) that includes metal oxide. The ESL includes a first portion in contact with the conductive component and a second portion in contact with the ILD. The method further comprises baking the ESL to transform the metal oxide located in the second portion of the ESL into metal silicon oxide, and selectively etching the ESL so as to remove the first portion of the ESL but not the second portion of the ESL.

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

Embodiments of the present application provide a semiconductor structure and its formation method. The method includes: the substrate being provided with a groove, a sidewall of the groove including a first sub-sidewall and a second sub-sidewall that extend upwards from a bottom of the groove sub-sidewall; blowing a first precursor to a surface of the substrate, so that the first precursor is attached to a top surface of the substrate and the second sub-sidewall; blowing a second precursor to the surface of the substrate, so that the second precursor reacts with the first precursor to form a dielectric layer; alternately blowing the first precursor and the second precursor to the surface of the substrate to form a plurality of dielectric layers until a top opening of the groove is blocked, a region enclosed by the first sub-sidewall, the dielectric layer and the bottom of the groove forming a void.

According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.