A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lower surface region of a first conductivity type or a second conductivity type, wherein a shallowest doping concentration peak closest to the lower surface of the semiconductor substrate among the doping concentration peaks of the buffer region is a concentration peak of a hydrogen donor having a concentration higher than the other doping concentration peaks, and a ratio A/B of a peak concentration A of the shallowest doping concentration peak and an average peak concentration B of the other doping concentration peaks is 200 or less.

Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type which is disposed on the lower surface side of the semiconductor substrate and contains a hydrogen donor, and in which a doping concentration distribution in a depth direction of the semiconductor substrate has a single first doping concentration peak; a high-concentration region of a first conductivity type which is disposed between the buffer region and the upper surface of the semiconductor substrate, contains a hydrogen donor, and has a donor concentration higher than a bulk donor concentration; and a lower surface region of a first conductivity type or a second conductivity type which is disposed between the buffer region and a lower surface of the semiconductor substrate, and has a doping concentration higher than the high-concentration region.

There is provided a reverse-conducting IGBT having an improved trade-off relationship between recovery losses and a forward voltage drop during diode operation. A first recombination region is provided at least in a region of a sixth semiconductor layer which is at a second main surface side of a seventh semiconductor layer and which overlaps the seventh semiconductor layer as seen in plan view.

Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.

Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.

A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.