An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.

An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.

An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.

An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.

An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.

Gate structures are positioned within a region in accordance with a gate horizontal grid that includes at least seven gate gridlines separated from each other by a gate pitch of less than or equal to about 193 nanometers. Each gate structure has a substantially rectangular shape with a width of less than or equal to about 45 nanometers and is positioned to extend lengthwise along a corresponding gate gridline. Each gate gridline has at least one gate structure positioned thereon. A first-metal layer is formed above top surfaces of the gate structures within the region and includes first-metal structures positioned in accordance with a first-metal vertical grid that includes at least eight first-metal gridlines. Each first-metal structure has a substantially rectangular shape and is positioned to extend along a corresponding first-metal gridline. At least six contact structures of substantially rectangular shape contact the at least six gate structures.

Gate structures formed from substantially rectangular shaped gate structure layout shapes positioned on a gate horizontal grid having at least seven gate gridlines within a region. A first-metal layer including first-metal structures formed from substantially rectangular shaped first-metal structure layout shapes is formed above top surfaces of the gate structures within the region. The first-metal structure layout shapes are positioned on a first-metal vertical grid having at least eight first-metal gridlines. At least six contact structures are formed from substantially rectangular shaped contact structure layout shapes in physical and electrical contact with corresponding ones of at least six of the gate structures. A total number of first-transistor-type-only gate structures equals a total number of second-transistor-type-only gate structures within the region. At least four transistors of a first transistor type and at least four transistors of a second transistor type collectively form part of a logic circuit within the region.

An integrated circuit, in the form of a wafer, die, or chip, includes multiple standard cell-compatible fill cells, configured to enable non-contact electrical measurements. Such fill cells include mesh pads that contain at least three conductive stripes disposed between adjacent gate stripes. Such fill cells further include geometry to enable non-contact evaluation of tip-to-side shorts and/or leakages.

A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOES), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The first DOE contains fill cells configured to enable non-contact (NC) detection of via opens, and the second DOE contains fill cells configured to enable NC detection of metal island opens. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.

A multilevel semiconductor device, the device including: a first level including a first array of first programmable cells and a first control line; a second level including a second array of second programmable cells and a second control line; and a third level including a third array of third programmable cells and a third control line, where the second level overlays the first level, where the third level overlays the second level, where the first programmable cells are self-aligned to the second programmable cells, and where a programmable logic cell includes a plurality of the first programmable cells and a plurality of the second programmable cells.