A method for forming a backside illuminated image sensor with a three-dimensional transistor structure is provided, where forming a gate of the three-dimensional transistor structure includes: forming a source follower transistor and/or a reset transistor with a three-dimensional transistor structure, wherein the source follower transistor and/or the reset transistor correspond to a protruding structure; and forming an insulating sidewall around the protruding structure, forming a groove between the insulating sidewall and a channel region of a transistor corresponding to the protruding structure, and forming a gate of the transistor in the groove, wherein the gate of the transistor is isolated by the insulating sidewall.

A method for forming a backside illuminated image sensor with a three-dimensional transistor structure is provided, where forming a gate of the three-dimensional transistor structure includes: forming a source follower transistor and/or a reset transistor with a three-dimensional transistor structure, wherein the source follower transistor and/or the reset transistor correspond to a protruding structure; and forming an insulating sidewall around the protruding structure, forming a groove between the insulating sidewall and a channel region of a transistor corresponding to the protruding structure, and forming a gate of the transistor in the groove, wherein the gate of the transistor is isolated by the insulating sidewall.