Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
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H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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H01L29/76
Unipolar devices; , e.g. field effect transistors
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H01L29/778
with two-dimensional charge carrier gas channel, e.g. HEMT; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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H01L29/7782
with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
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H01L29/7783
using III-V semiconductor material
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H01L29/7784
with delta or planar doped donor layer
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H01L29/7784

Carbon doping semiconductor devices
09865719 · 2018-01-09 · ·

A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 510.sup.18 cm.sup.3 and the dislocation density in the III-N semiconductor layer is less than 210.sup.9 cm.sup.2.