A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

A display device includes a first substrate having a display area and a peripheral area, the first substrate including a first inclined surface disposed at an outer portion of the peripheral area and being angled relative to the first substrate in the display area; a pixel structure disposed on the first substrate in the display area; a second substrate disposed on the pixel structure; a first electrode disposed on the first inclined surface and between the first substrate and the second substrate; and a second electrode disposed on sides of the first and second substrates, the second electrode being in contact with the first electrode.

A display device includes a plate-like substrate having a first surface and a second surface, pixel units on the first surface, and a power supply voltage feeder on the second surface. The power supply voltage feeder outputs first and second power supply voltages applicable to the pixel units. The second power supply voltage is lower in potential than the first power supply voltage. The display device includes a first wiring conductor electrically connecting the power supply voltage feeder and the pixel units and a second wiring conductor electrically connecting the power supply voltage feeder and the pixel units. At least one of the first or second wiring conductor includes a planar conductive portion covering the first surface. The planar conductive portion includes connectors connected to the power supply voltage feeder on at least two sides of the substrate.

In an embodiment a composite semiconductor component includes a carrier substrate having a plurality of projecting elements projecting from a first main surface of the carrier substrate, an electrically conductive material electrically conductively connected to a contact region of the carrier substrate and located on at least one of the projecting elements, some of the projecting elements not being covered with the electrically conductive material and a semiconductor chip arranged on the carrier substrate and having at a first surface at least one contact pad electrically connected to the electrically conductive material on at least one element, wherein, at a position at which the contact pad and the electrically conductive material on the projecting element are in each case in contact with one another, the contact pad has a larger lateral extent than the projecting element in each case.

A printed structure includes a destination substrate comprising two or more contact pads disposed on or in a surface of the destination substrate, a component disposed on the surface, and two or more electrically conductive connection posts. Each of the connection posts extends from a common side of the component. Each of the connection posts is in electrical and physical contact with one of the contact pads. The component is tilted with respect to the surface of the destination substrate. Each of the connection posts has a flat distal surface.

An electrical component including a substrate, a first dielectric layer on the substrate, a redistribution layer pad on the first dielectric layer, and a component interconnection element on the redistribution layer pad so that the component interconnection element fills an opening in the second dielectric layer. The opening includes at least one protrusion between the component interconnection element solder ball metallization and the redistribution layer pad.

A semiconductor Schottky rectifier built in an epitaxial semiconductor layer over a substrate has an anode structure and a cathode structure extending from the surface of the epitaxial layer. The cathode contact structure has a trench structure near the epi-layer and a vertical sidewall surface covered with a gate oxide layer. The cathode structure further comprises a polysilicon element adjacent to the gate oxide layer.

A display device includes a driving member which provides an electrical signal and includes a connection terminal which transmits the electrical signal, a pad electrode which receives the electrical signal from the driving member and is electrically connected to the connection terminal of the driving member, an organic layer on the pad electrode, the organic layer including a side surface defining an opening of the organic layer which exposes the pad electrode to outside the organic layer and within the opening, a protrusion protruding from the side surface, and a connection conductive layer which electrically connects the pad electrode to the connection terminal, within the opening of the organic layer, where the connection conductive layer covers each of the pad electrode which is exposed by the opening of the organic layer, the side surface of the organic layer, and the protrusion of the organic layer.

A display panel includes a substrate including a display area and a pad area spaced apart from the display area, and an uneven pad disposed on the substrate in the pad area. The uneven pad includes a first conductive layer, a first organic layer disposed on the first conductive layer and having an upper surface having an uneven shape, and a second conductive layer disposed on the first organic layer.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.