A semiconductor package structure includes a semiconductor die surface having a narrower pitch region and a wider pitch region adjacent to the narrower pitch region, a plurality of first type conductive pillars in the narrower pitch region, each of the first type conductive pillars having a copper-copper interface, and a plurality of second type conductive pillars in the wider pitch region, each of the second type conductive pillars having a copper-solder interface. A method for manufacturing the semiconductor package structure described herein is also disclosed.

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

A bump structure that may be used to interconnect one substrate to another substrate is provided. A conductive pillar is formed on a first substrate such that the conductive pillar has a width different than a contact surface on a second substrate. In an embodiment the conductive pillar of the first substrate has a trapezoidal shape or a shape having tapered sidewalls, thereby providing a conductive pillar having base portion wider than a tip portion. The substrates may each be an integrated circuit die, an interposer, a printed circuit board, a high-density interconnect, or the like.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer.

A wiring board includes first insulating layers; first wiring layers; first via wirings; second insulating layers; second wiring layers; second via wirings; and a solder resist layer, wherein the first insulating layers are composed of non-photosensitive resin, wherein the second insulating layers, and the solder resist layer are composed of photosensitive resin, respectively, wherein the first surface of the uppermost first insulating layer and the first end surface of the first via wiring embedded in the uppermost first insulating layer are polished surfaces, wherein the first end surface of the first via wiring embedded in the uppermost first insulating layer is flush with the first surface of the uppermost first insulating layer, and wherein the wiring density of the second wiring layers is higher than the wiring density of the first wiring layers.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

A structure for a semiconductor device includes a copper (Cu) layer and a first nickel (Ni) alloy layer with a Ni grain size a.sub.1. The structure also includes a second Ni alloy layer with a Ni grain size a.sub.2, wherein a.sub.1<a.sub.2. The first Ni alloy layer is between the Cu layer and the second Ni alloy layer. The structure further includes a tin (Sn) layer. The second Ni alloy layer is between the first Ni alloy layer and the Sn layer.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Semiconductor die assemblies with flexible interconnects, and associated methods and systems are disclosed. The semiconductor die assembly includes a package substrate and a semiconductor die attached to the package substrate through the flexible interconnects. The flexible interconnects include one or more rigid sections and one or more flexible sections, each of which is disposed next to the rigid sections. The flexible sections may include malleable materials with relatively low melting temperatures (e.g., having relatively low modulus at elevated temperatures) such that the flexible interconnects can have reduced flexural stiffness during the assembly process. The malleable materials of the flexible interconnects, through plastic deformation in response to stress generated during the assembly process, may facilitate portions of the flexible interconnects to shift so as to reduce transfer of the stress to other parts of the semiconductor die assembly—e.g., circuitry of the semiconductor die.