A semiconductor device includes a semiconductor chip having a pad which is exposed through a passivation layer, a bump pillar formed over the passivation layer adjacent to the pad, but not overlapping with the pad. The semiconductor chip also has a solder layer including a solder bump portion which is formed over the bump pillar and a solder fillet portion which is formed at one side of the bump pillar facing the pad to cover the pad and electrically couples the bump pillar and the pad.

A display device includes: a display panel driven to display an image, the display panel including a substrate including a display area at which the image is displayed; a terminal pad on the substrate and through which a driving signal is applied to the display area; a driving chip through which the driving signal is applied to the terminal pad; and a non-conductive film which fixes the driving chip to the substrate. The driving chip includes: a non-conductive elastic support body projected from a surface of the driving chip; a bump wiring on the non-conductive elastic support body, the bump wiring directly contacting the terminal pad to apply the driving signal to the terminal pad; and a dispersed particle on the non-conductive elastic support body.

An electronic device includes a semiconductor die having a first side, an orthogonal second side for mounting to a substrate or circuit board, a conductive terminal on the first side, the conductive terminal having a center that is spaced apart from the second side by a first distance along a direction, and a solder structure extending on the conductive terminal, the solder structure having a center that is spaced apart from the center of the conductive terminal by a non-zero second distance along the direction.

A method of producing a hybridized device including two microelectronic components, including a first microelectronic component having conductive inserts on a connection surface, and a second microelectronic component having ductile conductive pads on a surface opposed to the connection surface, is provided. The method includes the steps of hybridizing the first and second electronic components face-to-face by arranging the connection surface of the first microelectronic component to oppose the surface of the second microelectronic component having the ductile conductive pads, and establishing an electro-mechanical connection between the first microelectronic component and the second microelectronic component by inserting, at ambient temperature, inserts of the first microelectronic component, provided with a second metal sub-layer, into the ductile conductive pads of the second microelectronic component.

External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

A display device includes: a display panel driven to display an image, the display panel including a substrate including a display area at which the image is displayed; a terminal pad on the substrate and through which a driving signal is applied to the display area; a driving chip through which the driving signal is applied to the terminal pad; and a non-conductive film which fixes the driving chip to the substrate. The driving chip includes: a non-conductive elastic support body projected from a surface of the driving chip; a bump wiring on the non-conductive elastic support body, the bump wiring directly contacting the terminal pad to apply the driving signal to the terminal pad; and a dispersed particle on the non-conductive elastic support body.

A substrate includes a support layer, a column-shaped first bump, and a second bump. The support layer has a main surface. The first bump is filled with a first conductive metal and also has a first upper surface and a side surface. The second bump includes a plurality of fine particles formed of a second conductive metal and also has a third portion configured to cover the first upper surface and a fourth portion configured to cover a part of the side surface. The first bump is disposed on the main surface, or the first bump is connected to an electrode disposed on the main surface. The second bump has a convex second upper surface. A height of the fourth portion in a direction perpendicular to the first upper surface is smaller than that of the first bump.

A method is disclosed of fabricating a microelectronic package comprising a substrate overlying the front face of a microelectronic element. A plurality of metal bumps project from conductive elements of the substrate towards the microelectronic element, the metal bumps having first ends extending from the conductive elements, second ends remote from the conductive elements, and lateral surfaces extending between the first and second ends. The metal bumps can be wire bonds having first and second ends attached to a same conductive pad of the substrate. A conductive matrix material contacts at least portions of the lateral surfaces of respective ones of the metal bumps and joins the metal bumps with contacts of the microelectronic element.

An exemplary embodiment provides a driving circuit chip including: a substrate; a terminal electrode disposed on the substrate; and an electrode pad disposed on the terminal electrode, wherein the electrode pad includes: a bump structure protruded from the substrate to include a short side and a long side; and a bump electrode disposed on the bump structure and connected with the terminal electrode around a short edge portion of the bump structure, wherein the bump electrode is disposed to not cover at least a part of a long edge portion of the bump structure.

A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).