Components may be placed on an active side of a wafer as part of wafer-level chip scale packaging (WLCSP) for use in electronic devices. Pad layouts for the components on an active side of a wafer may be passivation-defined by forming a conductive terminal over a first dielectric layer and a forming a passivating, second dielectric layer over the conductive terminal. Openings formed in the second dielectric layer define component contacts to the conductive terminal and circuitry on the wafer coupled to the conductive terminal. Trenches may be used between pairs of contact pads to further reduce issues resulting from short circuits and/or underfills. A conductive pad may further be deposited in the opening to form underbump metallization (UBM) for coupling the component to the wafer.

Die reconstitution methods and dies with reconstituted contact bumps are described. In an embodiment, a die reconstitution method includes reconstituting a plurality of dies including first contact bumps of a first type, partially removing the first contact bumps, and forming second contact bumps of a second type on top of the partially removed first contact bumps, where the second type is different than the first type.

A semiconductor device includes bumps and a plurality of input/output areas on a substrate. Each of the input/output areas include semiconductor elements on the substrate, lower wiring patterns connected to the semiconductor elements, and input/output pins above and connected to the lower wiring patterns. The semiconductor elements provide a logic circuit and a protection circuit. The bumps are above the lower wiring patterns and connected to the input/output pins by upper wiring patterns. The input/output areas include a first input/output area and a second input/output area. The input/output areas includes a first circuit area including the electrostatic discharge protection circuit and a second circuit area including the logic circuit. In the first input/output area, the input/output pin is in the first circuit area. In the second input/output area, the input/output pin is in the second circuit area.

An integrated circuit (IC) chip comprises a plurality of pads and a plurality of bumps. The plurality of pads includes a first pad. The plurality of bumps is disposed on the plurality of pads. The plurality of bumps includes a first bump disposed on the first pad. The first bump as a width that is different than an exposed with of the first pad. The center of the first bump is not aligned with a center of the first pad.

In an embodiment a method includes providing a semiconductor chip having a plurality of contact pins, at least one positioning pin and an underside, wherein the contact pins and the positioning pin protrude from the underside, respectively, wherein the contact pins are configured for making electrical contact with the semiconductor chip, wherein the positioning pin narrows in a direction away from the underside, and wherein the positioning pin protrudes further from the underside than the contact pins, providing a connection carrier having a plurality of contact recesses, at least one positioning recess and an upper side, wherein each contact recess is at least partially filled with a solder material, heating the solder material in the contact recesses to a joining temperature at which the solder material at least partially melts and placing the semiconductor chip on the connection carrier, wherein each contact pin is inserted into a contact recess and the positioning pin is inserted into the positioning recess.

An electronic device has a plurality of integrated circuits fixed to a support between transmitting and receiving antennas. An integrated circuit generates a synchronization signal supplied to the other integrated circuits. Each integrated circuit is formed in a die integrating electronic components and overlaid by a connection region according to the Flip-Chip Ball-Grid-array or embedded Wafer Level BGA. A plurality of solder balls for each integrated circuit is electrically coupled to the electronic components and bonded between the respective integrated circuit and the support. The solder balls are arranged in an array, aligned along a plurality of lines parallel to a direction, wherein the plurality of lines comprises an empty line along which no solder balls are present. A conductive synchronization path is formed on the support and extends along the empty line of at least one integrated circuit, between the solder balls of the latter.

In one instance, a semiconductor package includes a lead frame and a semiconductor die mounted to the lead frame via a plurality of bumps that are shaped or tapered. Each of the plurality of bumps includes a first end connected to the semiconductor die and an opposing, second end connected to the lead frame. The first end has an end surface area A1. The second end has an end surface area A2. The end surface area A1 of the first end is less than the end surface area A2 of the second end. Other aspects are disclosed.

An integrated circuit chip includes a substrate on which a standard cell is disposed. The integrated circuit chip includes a plurality of power bumps including a plurality of first power bumps and a plurality of second power bumps, the plurality of power bumps. disposed to have a staggered arrangement in a central region of one surface of the integrated circuit chip, and connected to provide power to the standard cell; a first metal wiring disposed below the plurality of first power bumps and electrically connected to the plurality of first power bumps, at least a part of the first metal wiring overlapping the plurality of first power bumps from a plan view; and a second metal wiring horizontally separated from the first metal wiring, disposed below the plurality of second power bumps, and electrically connected to the plurality of second power bumps, at least a part of the second metal wiring overlapping the plurality of second power bumps from the plan view. The plurality of first power bumps are disposed along a first line extending in a first direction parallel to a first diagonal direction of the integrated circuit chip, and along a second line extending in a second direction parallel to a second diagonal direction of the integrated circuit chip different from the first diagonal direction, the first diagonal direction and second diagonal direction being diagonal with respect to edges of the integrated circuit chip, and the plurality of second power bumps are disposed along a third line spaced apart from the first line and extending in the first direction, and along a fourth line spaced apart from the second line and extending in the second direction.

In one instance, a semiconductor package includes a lead frame and a semiconductor die mounted to the lead frame via a plurality of bumps that are shaped or tapered. Each of the plurality of bumps includes a first end connected to the semiconductor die and an opposing, second end connected to the lead frame. The first end has an end surface area A1. The second end has an end surface area A2. The end surface area A1 of the first end is less than the end surface area A2 of the second end. Other aspects are disclosed.

A semiconductor device, an integrated fan-out package and a method of forming the same are disclosed. In some embodiments, a semiconductor device includes a substrate, a conductive layer, a passivation layer and a bump structure. The substrate has at least one electronic component therein. The conductive layer has a plurality of lines patterns over and electrically connected to the at least one electronic component. The passivation layer is over the conductive layer. The bump structure has a plurality of protruding parts penetrating through the passivation layer and electrically connected to the lines patterns of the conductive layer.