A package that includes a first integrated device comprising a first plurality of interconnects; a plurality of solder interconnects coupled to the first plurality of interconnects; a second integrated device comprising a second plurality of interconnects, wherein the second integrated device is coupled to the first integrated device through the second plurality of interconnects, the plurality of solder interconnects and the first plurality of interconnects; a polymer layer located between the first integrated device and the second integrated device; and a plurality of spacer balls located between the first integrated device and the second integrated device.

A chip package structure and a storage system are provided. The chip package structure includes a chipset, a first Re-Distribution Layer (RDL), and a bonding pad region. The chipset includes a plurality of chips distributed horizontally. The first RDL is disposed on a first surface of the chipset. The bonding pad region includes a plurality of bonding pads, the plurality of bonding pads are located on a side surface of the first RDL away from the chipset, and the plurality of bonding pads are connected to the plurality of chips through the first RDL.

A semiconductor package includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip; an underfill material layer interposed between the first semiconductor chip and the second semiconductor chip; and a first dam structure disposed on the first semiconductor chip. The first dam structure extends along an edge of the second semiconductor chip and includes unit dam structures apart from each other with a slit therebetween. A vertical level of an upper surface of the first dam structure is located between a vertical level of a lower surface of the second semiconductor chip and a vertical level of an upper surface of the second semiconductor chip. A first sidewall of the first dam structure is in contact with the underfill material layer and includes a flat surface parallel to a sidewall of the second semiconductor chip that faces the first sidewall of the first dam structure.

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

A temporary chip assembly, a display panel, and manufacturing methods of the temporary chip assembly and the display panel are provided. In the display panel, welding points between a micro light-emitting chip and corresponding bonding pads on a display backboard are covered with pyrolytic adhesive to block water and oxygen, thereby slowing down or avoiding the oxidation of the welding points.

A semiconductor package includes a base chip including a passivation layer on an upper surface thereof, a semiconductor chip on the base chip, a bump on a lower surface of the semiconductor chip, an underfill layer covering the bump and covering the lower surface of the semiconductor chip, an encapsulant covering the semiconductor chip on the base chip, and an organic material layer on the passivation layer, wherein the base chip includes silicon (Si), the passivation layer has a first region in contact with the underfill layer and a second region, surrounding the first region, and the organic material layer is on the second region.

A quantum processor includes: a first chip comprising a qubit array, in which a plurality of qubits within the qubit array define an enclosed region on the first chip, in which each qubit of the plurality of qubits that define the enclosed region is arranged to directly electromagnetically couple to an adjacent qubit of the plurality of qubits that define the enclosed region, and in which each qubit of the qubit array comprises at least two superconductor islands, and a second chip bonded to the first chip, the second chip including one or more qubit control elements, in which the qubit control elements are positioned directly over the enclosed region of the first chip.

A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device is provided with a structure that inhibits a reduction in contrast due to the light guided by a layer extending across light-emitting elements. A structure body that absorbs or reflects visible light is provided between adjacent light-emitting elements. This structure body absorbs or reflects the light emitted from a light-emitting element and traveling toward an adjacent pixel, whereby a reduction in contrast due to stray light is inhibited.

A substrate or semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a solder cup. The semiconductor device assembly includes a substrate disposed over another substrate. At least one solder cup extends from one substrate towards an under bump metal (UBM) on the other substrate. The barrier on the exterior of the solder cup may be a standoff to control a bond line between the substrates. The barrier may reduce solder bridging during the formation of a semiconductor device assembly. The barrier may help to align the solder cup with a UBM when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of substrates and/or semiconductor devices.

A semiconductor device is disclosed. The semiconductor device includes a first die on a first substrate, a second die on a second substrate separate from the first substrate, a transmission line in a redistribution layer on a wafer, and a magnetic structure surrounds the transmission line. The first transmission line electrically connects the first die and the second die. The magnetic structure is configured to increase the characteristic impedance of the transmission line, which can save the current and power consumption of a current mirror and amplifier in a 3D IC chip-on-wafer-on-substrate (CoWoS) semiconductor package.