Patent classifications
H01L2224/16155
HIGH-FREQUENCY MODULE
A high-frequency module includes a module substrate including major surfaces opposite to each other; a module substrate including major surfaces opposite to each other, the major surface being disposed facing the major surface; a first electronic component including a filter coupled to a power amplifier; a second electronic component including a filter coupled to a low-noise amplifier; and a third electronic component (an integrated circuit) including the low-noise amplifier. The first electronic component is disposed one of between the major surfaces, on the major surface, and on the major surface. The second electronic component is disposed another one of between the major surface surfaces, on the major surface, and on the major surface. The third electronic component is disposed other one of between the major surfaces, on the major surface, and on the major surface.
RADIO-FREQUENCY MODULE
A radio-frequency module includes a module substrate having major surfaces opposite to each other; a module substrate having major surfaces opposite to each other, the major surface being disposed facing the major surface; a first electronic component including a filter coupled to a power amplifier via a switch; a second electronic component including a filter coupled to the power amplifier via the switch; and a third electronic component including the switch. The first electronic component is disposed one of between the major surfaces, on the major surface, and on the major surface. The second electronic component is disposed another one of between the major surfaces, on the major surface, and on the major surface. The third electronic component is disposed other one of between the major surfaces, on the major surface, and on the major surface.
SEMICONDUCTOR DEVICE
A semiconductor device has a semiconductor substrate, at least one first transistor that has a mesa structure including one or more semiconductor layers, a first bump that overlaps the first transistor and extends in a first direction, and a second bump, in which the mesa structure has a first end portion on one end side in a second direction and a second end portion on the other end side in the second direction. The opening has a first opening end portion and a second opening end portion that are adjacent in the second direction. In plan view, the first opening end portion is closer to the second bump than the second opening end portion and the first end portion and the second end portion of the mesa structure are disposed between the first opening end portion and the second opening end portion.
ELECTRONIC PACKAGE AND A METHOD FOR MAKING THE SAME
An electronic package is provided. The electronic package comprises a substrate having a first region and a second region; a first set of electronic components mounted on the substrate in the first region; a second set of electronic components mounted on the substrate in the second region; an encapsulant layer disposed on the substrate and encapsulating the first and second sets of electronic components; a set of interconnect components disposed on the substrate in the second region, and extending through the encapsulant layer, wherein the set of interconnect components are electrically coupled to the first and second sets of electronic components; and a connector mounted on the encapsulant layer and electrically coupled to the first and second sets of electronic components through the set of interconnect components.
HEAT DISSIPATION DEVICE HAVING A THERMALLY CONDUCTIVE STRUCTURE AND A THERMAL ISOLATION STRUCTURE IN THE THERMALLY CONDUCTIVE STRUCTURE
A heat dissipation device may be formed as a thermally conductive structure having at least one thermal isolation structure extending at least partially through the thermally conductive structure. The heat dissipation device may be thermally connected to a plurality of integrated circuit devices, such that the at least one thermal isolation structure is positioned between at least two integrated circuit devices. The heat dissipation device allows for heat transfer away from each of the plurality of integrated circuit devices, such as in a z-direction within the thermally conductive structure, while substantially preventing heat transfer in either the x-direction and/or the y-direction within the thermally isolation structure, such that thermal cross-talk between integrated circuit devices is reduced.
ELECTRICAL BRIDGE PACKAGE WITH INTEGRATED OFF-BRIDGE PHOTONIC CHANNEL INTERFACE
A circuit package is described that includes a photonic interposer, a second interposer, and a die partially overlapping and connected to both the photonic interposer and the second interposer.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a display device and a method of manufacturing the same, wherein an end portion of a pad provided on a first substrate is spaced apart and separated from an upper surface of the first substrate, and a connection electrode electrically connected with the pad is in contact with a lateral surface of the pad and a lower surface of the pad.
Display device and method of manufacturing the same
Disclosed is a display device and a method of manufacturing the same, wherein an end portion of a pad provided on a first substrate is spaced apart and separated from an upper surface of the first substrate, and a connection electrode electrically connected with the pad is in contact with a lateral surface of the pad and a lower surface of the pad.
POWER AMPLIFICATION HIGH-FREQUENCY CIRCUIT DEVICE
A power amplification high-frequency circuit device includes: an input conversion pin; an output conversion pin; a high-frequency amplifier having an input terminal and an output terminal; a waveguide tube in which an input waveguide tube and an output waveguide tube face each other with a short wall interposed between the input waveguide tube and the output waveguide tube, an upper wall of the input waveguide tube has an input pin insertion hole into which the input conversion pin is inserted while being electrically insulated, an upper wall of the output waveguide tube has an output pin insertion hole into which the output conversion pin is inserted while being electrically insulated, an upper wall has a storage portion having a flat bottom surface, and the high-frequency amplifier is stored in the storage portion with a bottom surface thereof being in close contact with the bottom surface of the storage portion.
SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package device includes: (1) a substrate having a top surface; (2) a passive component disposed on the substrate and having a top surface; (3) an active component disposed on the substrate and having a top surface; and (4) a package body disposed on the substrate, the package body including a first portion covering the active component and the passive component, and a second portion covering the passive component, wherein a top surface of the second portion of the package body is higher than a top surface of the first portion of the package body, and the first portion and the second portion of the package body include different materials.