Microelectronic die package structures formed according to some embodiments may include a substrate and a die having a first side and a second side. The first side of the die is coupled to the substrate, and a die backside layer is on the second side of the die. The die backside layer includes a plurality of unfilled grooves in the die backside layer. Each of the unfilled grooves has an opening at a surface of the die backside layer, opposite the second side of the die, and extends at least partially through the die backside layer.

A package comprising a substrate comprising a plurality of interconnects, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, and an interconnect device coupled to the substrate. The first integrated device, the second integrated device, the interconnect device and the substrate are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through at least the substrate, through the interconnect device and back through the substrate. The electrical path includes at least one interconnect that extends diagonally.

A package comprising a substrate comprising a plurality of interconnects, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, and an interconnect device coupled to the substrate. The first integrated device, the second integrated device, the interconnect device and the substrate are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through at least the substrate, through the interconnect device and back through the substrate. The electrical path includes at least one interconnect that extends diagonally.

Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.

An electronic device has a plurality of integrated circuits fixed to a support between transmitting and receiving antennas. An integrated circuit generates a synchronization signal supplied to the other integrated circuits. Each integrated circuit is formed in a die integrating electronic components and overlaid by a connection region according to the Flip-Chip Ball-Grid-array or embedded Wafer Level BGA. A plurality of solder balls for each integrated circuit is electrically coupled to the electronic components and bonded between the respective integrated circuit and the support. The solder balls are arranged in an array, aligned along a plurality of lines parallel to a direction, wherein the plurality of lines comprises an empty line along which no solder balls are present. A conductive synchronization path is formed on the support and extends along the empty line of at least one integrated circuit, between the solder balls of the latter.

Semiconductor packages may include a semiconductor chip on a substrate and an under-fill layer between the semiconductor chip and the substrate. The semiconductor chip may include a semiconductor substrate including first and second regions, and an interlayer dielectric layer that may cover the semiconductor substrate and may include connection lines. First conductive pads may be on the first region and may be electrically connected to some of the connection lines. Second conductive pads may be on the second region and may be electrically isolated from all of the connection lines. The semiconductor chip may also include a passivation layer that may cover the interlayer dielectric layer and may include holes that may expose the first and second conductive pads, respectively. On the second region, the under-fill layer may include a portion that may be in one of the first holes and contact one of the second conductive pads.

Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.

A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first contact pad, and the substrate is electrically isolated from the second contact pad.