A display device may include a pixel disposed in a display area. The pixel may include first and second electrodes; a light emitting element disposed between the first and second electrodes; a first insulating pattern disposed on the light emitting element such that first and second ends of the light emitting element are exposed; a second insulating pattern disposed on the first insulating pattern such that ends of the first insulating pattern are exposed; a third insulating pattern disposed on the second insulating pattern and overlapping ends of the second insulating pattern; a first contact electrode disposed on the first end of the light emitting element, and electrically connecting the first end of the light emitting element to the first electrode; and a second contact electrode disposed on the second end of the light emitting element and electrically connecting the second end to the second electrode.

A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.

A display device may include: a substrate including a display area and a non-display area; and pixels provided on the display area, and each including sub-pixels each including an emission area and a non-emission area. Each sub-pixel may include a pixel circuit layer including at least one transistor, and a display element layer including at least one light emitting element configured to emit light and connected to the transistor. The display element layer may include: a first electrode and a second electrode spaced apart from each other with the light emitting element interposed therebetween; the light emitting element connected between the first and second electrodes; and a planarization layer provided on the pixel circuit layer, and coming into contact with at least a portion of each of opposite ends of the light emitting element. The planarization layer may overlap with each of the first electrode and the second electrode.

The present disclosure provides a wafer-level chip scale packaging structure and a method for manufacturing the same. The method includes the following steps: 1) providing a first supporting substrate; 2) placing a first chip on the first supporting substrate, and forming a first packaging layer on the first chip; 3) separating the first chip and the surface of the first packaging layer in contact with the first chip from the first supporting substrate, and attaching the other surface of the first packaging layer to a second supporting substrate; 4) disposing a second packaging layer on the surface of the first packaging layer which is in contact with the first chip; 5) forming a rewiring layer on the second packing layer, the rewiring layer is electrically connected to the first chip; and 6) electrically connecting a second chip to the rewiring layer.

A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

The interposer-chip-arrangement comprises an interposer (1), metal layers arranged above a main surface (10), a further metal layer arranged above a further main surface (11) opposite the main surface, an electrically conductive interconnection (7) through the interposer, the interconnection connecting one of the metal layers and the further metal layer, a chip (12) arranged at the main surface or at the further main surface, the chip having a contact pad (15), which is electrically conductively connected with the interconnection, a dielectric layer (2) arranged above the main surface with the metal layers embedded in the dielectric layer, a further dielectric layer (3) arranged above the further main surface with the further metal layer embedded in the further dielectric layer, and an integrated circuit (25) in the interposer, the integrated circuit being connected with at least one of the metal layers (5).

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other.