A method of mounting a plurality of semiconductor or microelectronic chips or dies, the method including providing a carrier, temporarily adhering the plurality of semiconductor or microelectronic chips or dies to the carrier with active faces of the chips or dies facing towards the carrier, covering backsides of the chips and filling empty spaces between the chips or dies with a metallic material to thereby define an assembly of the chips or dies and the metallic material, and releasing the assembly from the carrier, wherein each chip or die comprises at least one bonding ring higher than a height of the active face of the respective chip or die or any connections on the active face of the respective chip or die.

A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

A semiconductor package includes a plurality of stack modules which are vertically stacked. Each of the stack modules includes an interposing bridge, a semiconductor dies, and redistribution lines. The stack modules are provided by rotating each of the stack modules by different rotation angles corresponding to multiples of a reference angle and by vertically stacking the rotated stack modules. The interposing bridge includes a plurality of sets of through vias, and each set of through vias includes through vias arrayed in a plurality of columns. The plurality of sets of through vias are disposed in respective ones of divided regions of the interposing bridge. If the plurality of sets of through vias are rotated by the reference angle, then the rotated through vias overlap with the plurality of sets of through vias which are originally located. The redistribution lines connect the semiconductor dies to the plurality of sets of through vias.

Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface and an inactive surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads of the semiconductor chip; a passivation layer disposed on the second interconnection member; and an under-bump metal layer including an external connection pad formed on the passivation layer and a plurality of vias connecting the external connection pad and the redistribution layer of the second interconnection member to each other, wherein the first interconnection member includes a redistribution layer electrically connected to the connection pads of the semiconductor chip.

A wiring substrate includes a core substrate. The core substrate includes a first surface, a second surface, and an opening extending through the core substrate between the first and second surfaces. A first conductive film is formed on the first surface and covers the opening. A second conductive film is formed on the second surface. The second conductive film covers the opening. An electronic component is arranged in the opening and connected to the first conductive film. An insulator fills the opening. A first wiring portion includes alternately stacked insulative layers and wiring layers and covers the first surface of the core substrate and the first conductive film. A second wiring portion includes alternately stacked insulative layers and wiring layers, and covers the second surface of the core substrate and the second conductive film.

An electronic component embedded substrate includes an electronic component and a heat transfer block which are embedded in insulating layers, a first wiring patterns facing a first surface of the heat transfer block, a second wiring pattern facing a second surface of the heat transfer block, a first via conductor connecting the first wiring pattern and the first surface of the heat transfer block, and a second via conductor connecting the second wiring pattern and the second surface of the heat transfer block. The first and second surfaces and are insulated from each other. Thus, even when an electronic component of a type having large heat generation and being prohibited from connecting to a ground pattern is mounted, the second wiring pattern functioning as a heat dissipation pattern can be connected to a ground pattern on a motherboard.

An integrated fan-out (InFO) package includes a die, a plurality of conductive structures aside the die, an encapsulant laterally encapsulating the die and the conductive structure, and a redistribution structure. The redistribution structure is disposed on the encapsulant. The redistribution structure includes a plurality of routing patterns, a plurality of conductive vias, and a plurality of alignment marks. The routing patterns and the conductive vias are electrically connected to the die and the conductive structures. The alignment marks surround the routing patterns and the conductive vias. The alignment marks are electrically insulated from the die and the conductive structures. At least one of the alignment marks is in physical contact with the encapsulant, and vertical projections of the alignment marks onto the encapsulant have an offset from one another.

A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.