A device comprises a first semiconductor die embedded in a molding compound layer, a surface-mount device embedded in the molding compound layer, a plurality of interconnect structures formed on the molding compound layer, wherein the first semiconductor die is electrically coupled to the interconnect structures and the surface-mount device is electrically coupled to the interconnect structures through at least one V-shaped via and a plurality of bumps formed on and electrically coupled to the interconnect structures.

Embodiments of the disclosure provide a package structure and method of forming the same. The package structure includes a first die, a first encapsulant, a first RDL structure, a die stack structure and a second encapsulant. The first encapsulant laterally encapsulates the first die. The first RDL structure is electrically connected to the first die, and disposed on a first side of the first die and the first encapsulant. The die stack structure is electrically connected to the first die and disposed on a second side of the first die opposite to the first side. The second encapsulant is located over the first encapsulant and laterally encapsulating the die stack structure. A sidewall of the first encapsulant is aligned with a sidewall of the second encapsulant.

An article includes a solid circuit die on a first major surface of a substrate, wherein the solid circuit die includes an arrangement of contact pads, and wherein at least a portion of the contact pads in the arrangement of contact pads are at least partially exposed on the first major surface of the substrate to provide an arrangement of exposed contact pads; a guide layer including an arrangement of microchannels, wherein the guide layer contacts the first major surface of the substrate such that at least some microchannels in the arrangement of microchannels overlie the at least some exposed contact pads in the arrangement of exposed contact pads; and a conductive particle-containing liquid in at least some of the microchannels. Other articles and methods of manufacturing the articles are described.

The present disclosure relates to a semiconductor package including a first semiconductor chip having a first surface on which first connection pads are disposed, and a second surface on which second connection pads are disposed, and including through-vias connected to the second connection pads; a connection structure disposed on the first surface and including a first redistribution layer; a first redistribution disposed on the second surface; and a second semiconductor chip disposed on the connection structure. The first connection pads are connected to a signal pattern of the first redistribution layer, and the second connection pads are connected to at least one of a power pattern and a ground pattern of the second redistribution layer.

Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

A semiconductor package includes a substrate and a sub semiconductor package disposed over the substrate. The sub semiconductor package includes a sub semiconductor chip which has chip pads on its active surface facing the substrate, a sub molding layer which surrounds side surfaces of the sub semiconductor chip and has one surface facing the substrate, and redistribution conductive layers which are connected to the chip pads and extend over the one surface of the sub molding layer. The redistribution conductive layers include a signal redistribution conductive layer, which extends onto an edge of the sub molding layer and has a signal redistribution pad on its end portion, and a power redistribution conductive layer, which has a length shorter than a length of the signal redistribution conductive layer and has a power redistribution pad on its end portion.

A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

The present invention relates to a module that has a lower component of a module (1) having a material (3) in which at least one first structural element (4) is embedded, and an upper component of a module (2) having a material (3) in which at least a second component (16) is embedded. The upper component of the module (2) and the lower component of the module (1) are stacked, with the lower and the upper component of the module (2) being electrically connected and mechanically linked to each other. In addition, the present invention relates to a simple and cost-effective process for the production of a variety of modules. The invention makes it possible for the modules to be miniaturized with respect to surface and height and/or makes it possible to achieve greater integration by 3D packaging.

A package includes a device die, and an encapsulating material encapsulating the device die therein. The encapsulating material has a top surface coplanar with a top surface of the device die. A coil extends from the top surface to a bottom surface of the encapsulating material, and the device die is in the region encircled by the coil. At least one dielectric layer is formed over the encapsulating material and the coil. A plurality of redistribution lines is in the at least one dielectric layer. The coil is electrically coupled to the device die through the plurality of redistribution lines.

A method includes forming a coil over a carrier, encapsulating the coil in an encapsulating material, planarizing a top surface of the encapsulating material until the coil is exposed, forming at least one dielectric layer over the encapsulating material and the coil, and forming a plurality of redistribution lines extending into the at least one dielectric layer. The plurality of redistribution lines is electrically coupled to the coil.