Certain aspects of the present disclosure generally relate to a chip package having a split conductive pad for coupling to a device terminal. An example chip package generally includes a layer, a first plurality of conductive pads disposed on the layer, at least one conductive trace disposed on the layer and between the first plurality of conductive pads, and an electrical component having a first terminal coupled to the first plurality of conductive pads and disposed above the at least one conductive trace.

In an embodiment, a device includes: a molding compound; an integrated circuit die encapsulated in the molding compound; a through via adjacent the integrated circuit die; and a redistribution structure over the integrated circuit die, the molding compound, and the through via, the redistribution structure electrically connected to the integrated circuit die and the through via, the redistribution structure including: a first dielectric layer disposed over the molding compound; a first conductive via extending through the first dielectric layer; a second dielectric layer disposed over the first dielectric layer and the first conductive via; and a second conductive via extending through the second dielectric layer and into a portion of the first conductive via, an interface between the first conductive via and the second conductive via being non-planar.

Certain aspects of the present disclosure generally relate to a chip package having a split conductive pad for coupling to a device terminal. An example chip package generally includes a layer, a first plurality of conductive pads disposed on the layer, at least one conductive trace disposed on the layer and between the first plurality of conductive pads, and an electrical component having a first terminal coupled to the first plurality of conductive pads and disposed above the at least one conductive trace.

A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

One or more chip-embedded integrated voltage regulators (CEIVR's) are configured to provide power to a circuit or chip such as a CPU or GPU and meet power delivery specifications. The CEIVR's, circuit or chip, and power delivery pathways can be included within the same package. The CEIVR's can be separate from the circuit or chip.

A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.

A semiconductor package comprising: a frame having an opening and including wiring layers and one or more layer of connection vias; a semiconductor chip disposed in the opening and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant covering the frame and the semiconductor chip and filling the opening; a connection structure disposed on the frame and the active surface of the semiconductor chip, and including one or more redistribution layers electrically connected to the connection pads and the wiring layers; one or more passive components disposed on the connection structure; a molding material covering each of the passive components; and a metal layer covering outer surfaces of each of the frame, the connection structure, and the molding material. The metal layer is connected to a ground pattern included in the wiring layers of the frame.

A method including followings is provided. An encapsulated device including a semiconductor die and an insulating encapsulation laterally encapsulating the semiconductor die is provided. An insulating layer is formed over a surface of the encapsulated device. A groove pattern is formed on the insulating layer. A conductive paste is filled in the groove pattern and the conductive paste filled in the groove pattern is cured.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

A semiconductor package includes an encapsulated semiconductor device, a first redistribution structure, an insulating layer, and an antenna. The encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulation material. The redistribution structure is disposed on a first side the encapsulated semiconductor device and electrically connected to the semiconductor device. The insulating layer is disposed on a second side of the encapsulated semiconductor device and comprises a groove pattern. The antenna is filled the groove pattern, wherein an upper surface of the antenna is substantially coplanar with an upper surface of the insulating layer.