A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

A Micro LED transferring method, a Micro LED display panel and a Micro LED display device are provided. The Micro LED display panel includes a substrate, a pixel defining layer including multiple openings, first conducting layer located in the multiple openings, photosensitive conductive bonding layers and Micro LED structures. The photosensitive conductive bonding layer is solidified after receiving light, such that elements adhered on two opposite surfaces of the photosensitive conductive bonding layer are bonded together. Due to the photosensitive conductive bonding layer, a Micro LED is detected during a transferring process rather than after a bonding process, thereby eliminating a step of removing a bonded abnormal Micro LED, thus simplifying the detecting and repairing processes of Micro LEDs.

The present disclosure provides a microcontroller unit and its fabrication method. The microcontroller unit includes a logic control substrate, and also includes at least one memory die and at least one non-memory die, which are disposed on the logic control substrate. The logic control substrate includes a semiconductor device layer and an interconnection dielectric layer. A central processing unit and at least one logic controller are formed in the semiconductor device layer. All memory dies are disposed on the interconnection dielectric layer side by side or stacked one over another, and the at least one memory die is electrically connected to the central processing unit through a corresponding electrical interconnection structure in the interconnection dielectric layer. All non-memory dies are disposed on the interconnection dielectric layer side by side or stacked one over another and are electrically connected to corresponding logic controllers through corresponding electrical interconnection structures in the interconnection dielectric layer.

A device for attaching two elements such as a chip, an interposer and a support, at least one of said two elements being micro-manufactured. The device includes at least one projecting stud structured in a first element extending facing the second element, the stud being configured to create an attachment area between one end of the stud and the second element. The device also includes an attachment layer deposited in the attachment area so as to attach the stud to the second element, and a recess made in the attachment area such that the attachment layer extends at least partially into the recess.

A display device according to an example embodiment of the present disclosure may include a stretchable lower substrate; a lower pattern layer disposed on the lower substrate and including a plurality of lower plate patterns and a plurality of lower line patterns; a plurality of pixel circuits disposed on each of the plurality of lower plate patterns; a plurality of lower stretched lines disposed on each of the plurality of lower line patterns; an upper pattern layer disposed on the lower pattern layer and including a plurality of upper plate patterns and a plurality of upper line patterns; a plurality of light emitting elements disposed on each of the plurality of upper plate patterns; and a plurality of upper stretched lines disposed on each of the plurality of upper line patterns, so that a uniform power may be supplied.

An optical module includes a semiconductor chip, a first gold-tin layer formed over the semiconductor chip and having gold and tin as main components, a barrier layer formed over the first gold-tin layer, having slower diffusion velocity into tin than diffusion velocity of gold into tin, and having electric conductivity, a second gold-tin layer formed over the barrier layer and having gold and tin as main components, and an optical device provided over the second gold-tin layer.

Various embodiments of an integrated circuit module and a method of forming such module are disclosed. The module includes a first die having an active substrate, an integrated circuit disposed on a first major surface of the active substrate, and a cavity disposed in a second major surface of the active substrate. The module also includes a second die having a first major surface, a second major surface, and a conductive pad disposed on the second major surface. The second die is disposed at least partially within the cavity of the first die such that the first major surface of the second die faces the cavity of the first die.

A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.

An electric module including a first member in which a plurality of first electrodes are arranged on a first face, a second member in which a plurality of second electrodes are arranged on a second face facing the first face, first resin for adhering the first face with the second face, and a bonding portion for electrically connecting each of the first electrodes and each of the second electrodes. The bonding portion is formed of an electroless plating membrane, and the first resin is arranged around the bonding portion.

A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.