A display device includes: a substrate; sub-pixels on the substrate; data lines connected to the sub-pixels; a display driving circuit supplying data voltages to the data lines; and fan-out lines on the substrate and connecting the data lines and the display driving circuit. Each of the sub-pixels includes a first transistor including a first active layer on the substrate and including a silicon semiconductor and a first gate electrode on the first active layer, and a second transistor including a second active layer on the substrate and including an oxide semiconductor and a second gate electrode on the second active layer. The fan-out lines include first fan-out lines and second fan-out lines alternately arranged each other in one direction. The first fan-out lines are arranged on the same layer as the first gate electrode, and the second fan-out lines are arranged on the same layer as the second gate electrode.

A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

A display apparatus includes a substrate including a display region and a non-display region, a display element layer, a pad group, a touch electrode layer, and a touch insulating layer. The display element layer includes display elements provided in the display region in a plan view. The pad group may include output pads provided on substrate and provided in the non-display region in the plan view. The touch electrode layer is provided on the display element layer. The touch insulating layer is provided on the display element layer and contacts the touch electrode layer. An intaglio pattern is provided in the touch insulating layer overlapped with the non-display region, and the intaglio pattern is not overlapped with the pad group.

A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

A display apparatus includes a substrate including a display region and a non-display region, a display element layer, a pad group, a touch electrode layer, and a touch insulating layer. The display element layer includes display elements provided in the display region in a plan view. The pad group may include output pads provided on substrate and provided in the non-display region in the plan view. The touch electrode layer is provided on the display element layer. The touch insulating layer is provided on the display element layer and contacts the touch electrode layer. An intaglio pattern is provided in the touch insulating layer overlapped with the non-display region, and the intaglio pattern is not overlapped with the pad group.

A display apparatus includes a substrate including a display region and a non-display region, a display element layer, a pad group, a touch electrode layer, and a touch insulating layer. The display element layer includes display elements provided in the display region in a plan view. The pad group may include output pads provided on substrate and provided in the non-display region in the plan view. The touch electrode layer is provided on the display element layer. The touch insulating layer is provided on the display element layer and contacts the touch electrode layer. An intaglio pattern is provided in the touch insulating layer overlapped with the non-display region, and the intaglio pattern is not overlapped with the pad group.

A display device includes a display panel including a first signal pad and a second signal pad, a circuit board overlapped with the first and second signal pads, and an adhesive film overlapped with the first and second signal pads and disposed between the circuit board and the display panel. The adhesive film includes a base resin and a plurality of conductive balls dispersed in the base resin. The circuit board includes a first driving pad and a second driving pad. The first and second driving pads protrude toward the adhesive film and are arranged in a first direction. The first and second driving pads overlap with the first and second signal pads, respectively. The display device may be configured to satisfy the inequality: $T\ge G+\frac{B\times S}{W+S}.$

A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

A semiconductor device includes a stacked structure, channel layers passing through the stacked structure, a well plate located under the stacked structure, a source layer located between the stacked structure and the well plate, a connection structure coupling the channel layers to each other and including a first contact contacting the source layer and a second contact contacting the well plate, and an isolation pattern insulating the source layer and the well plate from each other.

A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.