A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

A semiconductor device includes a semiconductor element (30), an input lead, and first drive leads (60) connecting a source electrode of the semiconductor element (30) to the input lead. The first drive leads (60) are formed of a thin metal plate that is belt-shaped as viewed in a thickness-wise direction (Z). The first drive leads (60) include at least a metal plate (60A) connected to the semiconductor element (60) and a metal plate (60B) stacked on the metal plate (60A). The metal plate (60A) includes a first connector (61A) connected to the semiconductor element (30). The metal plate (60B) includes a first connector (61B) connected to the first connector (61A). The first connectors (61A, 61B) are stacked in the thickness-wise direction (Z).

A thermal management solution may be provided for a microelectronic system including a flexible integrated heat spreader, wherein the flexible integrated heat spreader may comprise a plurality of thermally conductive structures having a flexible thermally conductive film attached to and extending between each of the plurality of thermally conductive structures. The flexible integrated heat spreader may be incorporated into multi-chip package by providing a microelectronic substrate having a plurality of microelectronic devices attached thereto and by thermally contacting each of the plurality of thermally conductive structures of the flexible integrated heat spreader to its respective microelectronic device on the microelectronic substrate.

A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A power semiconductor module having a substrate, with a power semiconductor component, a connecting device, external terminal elements, a potting body and a pressure device, wherein the substrate has an insulant body and substrate conductor tracks, and the power semiconductor component is on a substrate conductor track, the connecting device is embodied as a film stack having a first electrically conductive film, a second electrically conductive film and an electrically insulating film arranged therebetween, wherein the external terminal elements each have a contact device for a substrate conductor track. The potting body completely covers the entire connecting device, envelops the substrate, and the external terminal elements apart from contact portions, and the pressure device exerts pressure on the potting body directly with a spring.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

A semiconductor module includes a wiring board, a semiconductor element disposed on and electrically connected to a conductor pattern of the wiring board, and a wiring member electrically connecting a conductor to an electrode of the semiconductor element. The wiring member includes a first conductor spacer, a second conductor spacer, and a laminate connecting the conductor spacers to each other. The laminate includes a plurality of conductor foils that are disposed in a laminated manner. The plurality of conductor foils includes at least one intermediate conductor foil, and first and second conductor foils sandwiching the intermediate conductor foil interposed therebetween. The intermediate conductor foil includes a void formation area in which a void is formed in the thickness direction between the linking region of the first conductor foil and the linking region of the second conductor foil.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.