A first heat sink has a first inner surface and a first outer surface, and has a first through hole. A second heat sink has a second inner surface disposed with a clearance left from the first inner surface of the first heat sink, and a second outer surface opposite to the second inner surface, and has a second through hole. A semiconductor element is disposed within a clearance between the first inner surface of the first heat sink and the second inner surface of the second heat sink. A sealing member seals the semiconductor element within the clearance between the first inner surface and the second inner surface. A first hollow tube is made of metal, and connects the first through hole and the second through hole.

The present disclosure relates to semiconductor components. The teachings thereof may be embodied in a lead frame for a semiconductor component including: a frame having a recess; an electrically conductive connecting element for establishing an electrical connection to the semiconductor component arranged in the recess; and an insulating element arranged in the recess and mechanically connecting the connecting element to the frame and electrically insulating it from the frame.

A semiconductor power device is disclosed. The semiconductor power device comprises a lead frame unit, two or more pluralities of single in-line leads, two or more semiconductor chip stacks, and a molding encapsulation. Each semiconductor chip stack includes a high-side semiconductor chip, a low-side semiconductor chip and a clip connecting a top surface of the high-side semiconductor chip to a bottom surface of the low-side semiconductor chip. This invention further discloses a method for fabricating semiconductor power devices. The method comprises the steps of providing a lead frame strip having a plurality of lead frame units; providing two or more pluralities of single in-line leads; attaching two or more high-side semiconductor chips to each lead frame unit; connecting each of the two or more high-side semiconductor chips to a respective lead by a respective clip of two or more first clips; attaching a respective low-side semiconductor chip of the two or more low-side semiconductor chips to each clip of the two or more first clips; molding an encapsulation; and singulating the lead frame strip and the encapsulation to form the semiconductor power devices.

Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.

In the semiconductor device, a screw has a head section embedded in a case groove section provided in a frame placing stage of a case to cause side and front surfaces of the head section to be covered by the case, thereby fixing the screw to the case. A threaded section passes through a frame through hole of a frame exposed section disposed above the head section to protrude upward to be exposed on a side facing away from the base plate.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

Semiconductor device A1 of the present disclosure includes: semiconductor element 10 (semiconductor elements 10A and 10B) having element obverse face and element reverse face facing toward opposite sides in z direction; support substrate 20 supporting semiconductor element 10; conductive block 60 (first block 61 and second block 62) bonded to element obverse face via first conductive bonding material (block bonding materials 610 and 620); and metal member (lead member 40 and input terminal 32) electrically connected to semiconductor element 10 via conductive block 60. Conductive block 60 has a thermal expansion coefficient smaller than that of metal member. Conductive block 60 and metal member are bonded to each other by a weld portion (weld portions M4 and M2) at which a portion of conductive block 60 and a portion of metal member are welded to each other. Thus, the thermal cycle resistance can be improved.

A manufacturing method for a power module capable of shortening a manufacturing time for a power module is obtained. The manufacturing method for a power module includes: a subassembly arranging step of placing a subassembly including a first electrode, a semiconductor device, and a second electrode on a heat sink via a joining material; and a transfer molding step of, after the subassembly arranging step, under a state in which the first electrode, the semiconductor device, and a second-electrode inner portion are arranged in a region surrounded by the heat sink and a molding die, injecting a thermoplastic resin into the region, wherein, in the transfer molding step, the subassembly is joined to the heat sink via the joining material with use of the resin.

A first alignment resin (4) is formed in an annular shape on an electrode (3) of an insulating substrate (1). First plate solder (5) having a thickness thinner than that of the first alignment resin (4) is arranged on the electrode (3) on an inner side of the annular shape of the first alignment resin (4). A semiconductor chip (6) is arranged on the first plate solder (5). The first plate solder (5) is made to melt to bond a lower surface of the semiconductor chip (6) to the electrode (3).

A semiconductor module 900 includes a semiconductor device 300 that includes first and second fin bases 800 having first and second connecting portions 810 and a resin 850 for sealing the outer peripheral side surfaces of first to fourth conductors 410 to 413, and a flow path forming body 600 connected to the first and second connecting portions 810 of the first and second fin bases 800. A first elastically deformed portion 801, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends 810a of the first and second connecting portions 810 becomes smaller than a distance in a thickness direction between intermediate portions 804 of the first and second connecting portions 810. The resin 850 is filled between the first and second connecting portions 810 of the first and second fin bases 800 are filled with the resin 850 therebetween.