A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A packaged electronic device includes a stacked configuration of a first semiconductor die in a first recess in a first side of a first conductive plate, a second semiconductor die in a second recess in a first side of a second conductive plate, a third conductive plate electrically coupled to a second side of the second semiconductor die, and a package structure that encloses the first semiconductor die, and the second semiconductor die, where the package structure includes a side that exposes a portion of a second side of the first conductive plate.

A power semiconductor device includes: a package and a plurality of power semiconductor chips, each power semiconductor chip including a semiconductor body, a first load terminal, a second load terminal and a control terminal. The device also includes a plurality of outside terminals. The outside terminals include: one or more first outside terminals electrically connected with the first load terminals; one or more second outside terminals each of which is electrically connected with each of the second load terminals; and a plurality of third outside terminals. Each control terminal is electrically connected with at least one individual third outside terminal of the plurality of third outside terminals.

A semiconductor module includes a supporting substrate, a conductive substrate supported by the supporting substrate, a conductive bonding member provided between the supporting substrate and the conductive substrate, and a semiconductor element electrically bonded to an obverse surface of the conductive substrate and having a switching function. The conductive bonding member includes a metal base layer, a first layer, and a second layer. The first layer is provided between the base layer and the conductive substrate, and is in direct contact with the conductive substrate. The second layer is provided between the base layer and the supporting substrate, and is in direct contact with the supporting substrate.

A semiconductor device includes a first die pad having a main surface, a second die pad having a second main surface, a first switching element connected to the first main surface, a second switching element connected to the second main surface, a first connecting member connecting the first main surface electrode of the first switching element to the second die pad, an encapsulation resin encapsulating the first switching element, the second switching element, the first die pad, the second die pad, and the first connecting member, and leads projecting out of one of the resin side surfaces of the encapsulation resin.

A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

A semiconductor package includes a molding compound, a chip and a conductive pad, wherein the chip is electrically connected to the conductive pad and both are encapsulated in the molding compound. An anchor flange is formed around a top surface of the conductive pad by over plating. When the conductive pad is embedded in the molding compound, the anchor flange engages the molding compound to prevent the conductive pad from separation. Bottoms of a chip and the conductive pad are exposed from the molding compound for electrically soldering to a circuit board.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

Provided is a semiconductor package including: at least one first substrate including at least one first substrate terminal extended therefrom; at least one second substrate joined to the upper surface of the first substrate using ultrasonic welding; at least one semiconductor chip joined to the upper surface of the second substrate; a package housing covering the at least one semiconductor chip and an area of the second substrate, where ultrasonic welding is performed; and terminals separated from the first substrate, electrically connected to the at least one semiconductor chip through electric signals, and at least one of them is exposed to the outside of the package housing, wherein a thickness of the terminals formed inside the package housing is same as or smaller than a thickness of the first substrate and the second substrate includes at least one embossing groove on the upper surface thereof.

A semiconductor package includes a molding compound, a chip and a conductive pad, wherein the chip is electrically connected to the conductive pad and both are encapsulated in the molding compound. An anchor flange is formed around a top surface of the conductive pad by over plating. When the conductive pad is embedded in the molding compound, the anchor flange engages the molding compound to prevent the conductive pad from separation. Bottoms of a chip and the conductive pad are exposed from the molding compound for electrically soldering to a circuit board.