A gang clip includes a plurality of clips formed from a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a length and a bend angle sufficient to electrically contact a lead terminal of the leadframe to be used to form a device. Adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane. The first tie bar extends to a saw street region located between adjacent ones of the clips. A second tie bar attached to the first tie bar is positioned in the saw street region.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A power module having electrical connection parts, preferably made of metal, each having a main plate, the main plates extending in one and the same main plane so as to be substantially coplanar. At least one of the electrical connection parts includes at least one electrical connector projecting from its main plate. At least one transistor is electrically connected between two upper faces of respectively two of the main plates, and an electrically insulating overmolding, for example made of resin, covers each transistor and at least one portion of the upper faces of the main plates.

A power module having electrical connection parts, preferably made of metal, each having a main plate, the main plates extending in one and the same main plane so as to be substantially coplanar. At least one of the electrical connection parts includes at least one electrical connector projecting from its main plate. At least one transistor is electrically connected between two upper faces of respectively two of the main plates, and an electrically insulating overmolding, for example made of resin, covers each transistor and at least one portion of the upper faces of the main plates.

Implementations of the semiconductor package may include a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall. Implementations of the semiconductor package may include a first lead and a second lead extending from the first sidewall and a first half-etched tie bar directly coupled to the first lead. An end of the first half-etched tie bar may be exposed on the third sidewall of the semiconductor package. Implementations of the semiconductor package may also include a second half-etched tie bar directly coupled to the second lead. An end of the second half-etched tie bar may be exposed on the fourth sidewall. An end of the first lead and an end of the second lead may each be electroplated. The first die flag and the second die flag may be electrically isolated from the first lead and the second lead.

In a wiring member, an element connection portion, a plate connection portion, and an upper surface portion are at height positions different from one another. The element connection portion has a through hole, and the plate connection portion has a through hole and a chamfer. The upper surface portion which is not connected to another portion, has projections asymmetrically disposed on both side surfaces thereof. Owing to these features, the type, the orientation, and the front and the back of the wiring member can be easily distinguished. Accordingly, it is possible to prevent incorrect assembling of the wiring member in a semiconductor module.

A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

This disclosure relates to a leadless packaged semiconductor device including a top and a bottom opposing major surfaces and sidewalls extending between the top and bottom surfaces, the leadless packaged semiconductor device further includes a lead frame structure including an array of two or more lead frame sub-structures each having a semiconductor die arranged thereon, and terminals and a track extended across the bottom surface of the semiconductor device. The track provides a region for interconnecting the semiconductor die and terminals, and the track is filled by an insulating material to isolate the lead frame sub-structures.