A lead frame for assembling a smart card is formed with a substrate having first and second opposing major surfaces. A die receiving area is formed in the first major surface of the substrate and surrounded by conductive vias. A conductive coating is formed on the second major surface of the substrate and patterned to form electrical contact pads over the conductive vias. A conductive trace is formed on the first major surface of the substrate. The conductive trace extends between at least two adjacent vias and partially surrounds the at least two adjacent conductive vias, thereby forming a gap in the portion of the trace that surrounds the vias. An electrical connection between an integrated circuit chip and the conductive via extends over the gap. The gap prevents the electrical connection from inadvertently contacting the conductive trace.

A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

A semiconductor module includes a laminated substrate that includes a heat radiating plate, and an insulation layer having a conductive pattern thereof and being disposed on a top surface of the heat radiating plate, a semiconductor element disposed on a top surface of the conductive pattern, an integrated circuit that controls driving of the semiconductor element, a control-side lead frame having a primary surface on which the integrated circuit is disposed, and a mold resin that seals the laminated substrate, the semiconductor element, the integrated circuit, and the control-side lead frame. The control-side lead frame has a rod-shaped first pin having a first end, a first end side of the first pin extending toward the top surface of the heat radiating plate, and the heat radiating plate has at least one insertion hole into one of which the first end of the first pin is press-fitted.

A semiconductor module includes a laminated substrate that includes a heat radiating plate, and an insulation layer having a conductive pattern thereof and being disposed on a top surface of the heat radiating plate, a semiconductor element disposed on a top surface of the conductive pattern, an integrated circuit that controls driving of the semiconductor element, a control-side lead frame having a primary surface on which the integrated circuit is disposed, and a mold resin that seals the laminated substrate, the semiconductor element, the integrated circuit, and the control-side lead frame. The control-side lead frame has a rod-shaped first pin having a first end, a first end side of the first pin extending toward the top surface of the heat radiating plate, and the heat radiating plate has at least one insertion hole into one of which the first end of the first pin is press-fitted.

A semiconductor package includes a frame having an insulative body with a first main surface and a second main surface opposite the first main surface, a first plurality of metal traces at the first main surface, and a first cavity in the insulative body. A thermally and/or electrically conductive material filling the first cavity in the insulative body and having a different composition than the first plurality of metal traces. The thermally and/or electrically conductive material provides a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body. A semiconductor die attached to the frame at the first main surface of the insulative body is electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body. A corresponding method of manufacture is also described.

A lead frame for assembling a smart card is formed with a substrate having first and second opposing major surfaces. A die receiving area is formed in the first major surface of the substrate and surrounded by conductive vias. A conductive coating is formed on the second major surface of the substrate and patterned to form electrical contact pads over the conductive vias. A conductive trace is formed on the first major surface of the substrate. The conductive trace extends between at least two adjacent vias and partially surrounds the at least two adjacent conductive vias, thereby forming a gap in the portion of the trace that surrounds the vias. An electrical connection between an integrated circuit chip and the conductive via extends over the gap. The gap prevents the electrical connection from inadvertently contacting the conductive trace.

The present invention relates to a curable heat radiation composition which includes two types of fillers with different compressive breaking strengths (except when the two types of fillers are the same substance) and a thermosetting resin, the compressive breaking strength ratio of the two types of fillers [compressive breaking strength of a filler (A) with a higher compressive breaking strength/compressive breaking strength of a filler (B) with a lower compressive breaking strength] being 5 to 1,500, the compressive breaking strength of the filler (A) being 100 to 1,500 MPa, and the compressive breaking strength of the filler (B) being 1.0 to 20 MPa, an adhesive sheet using the composition and a method for producing the same. An aluminum nitride is preferable as the filler (A) and hexagonal boron nitride agglomerated particles are preferable as the filler (B).

Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is and physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.