H01L2224/48096

Semiconductor device

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

Chip on Package Structure and Method
20210217726 · 2021-07-15 ·

A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two of the vias. The first die and the second die are encapsulated to form a first package, and at least one third die is connected to the first die or the second die. A second package is connected to the first package over the at least one third die.

Semiconductor device manufacturing method

A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

Semiconductor device manufacturing method

A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

An object is to provide a technique capable of improving heat dissipation while maintaining the workability of a product in a semiconductor device. A semiconductor device includes power chips, control chips configured to control the power chips, power side terminals, control side terminals, and a mold resin covering the power chips, the control chips, one ends side of the power side terminals, and one ends side of the control side terminals. An other ends side of the power side terminals and an other ends side of the control side terminals protrude horizontally from a side surface of the mold resin and bend downward at middle parts thereof. Of the power side terminals and the control side terminals, only on the other ends side of the power side terminals, heat dissipation portions protruding in a direction approaching or away from the mold resin from portions bent downward are formed.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

An object is to provide a technique capable of improving heat dissipation while maintaining the workability of a product in a semiconductor device. A semiconductor device includes power chips, control chips configured to control the power chips, power side terminals, control side terminals, and a mold resin covering the power chips, the control chips, one ends side of the power side terminals, and one ends side of the control side terminals. An other ends side of the power side terminals and an other ends side of the control side terminals protrude horizontally from a side surface of the mold resin and bend downward at middle parts thereof. Of the power side terminals and the control side terminals, only on the other ends side of the power side terminals, heat dissipation portions protruding in a direction approaching or away from the mold resin from portions bent downward are formed.

SEMICONDUCTOR DEVICE

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a mounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices

Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Method of manufacturing semiconductor module and semiconductor module

Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.

Method of manufacturing semiconductor module and semiconductor module

Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.