A semiconductor package structure includes a base. A first die is mounted on the base. The first die comprises a plurality of first pads with a first pad area arranged in a first tier. A plurality of second pads with a second pad area is arranged in a second tier. A second die is mounted on the base. The second die includes a plurality of third pads arranged in a third tier. A first bonding wire has two terminals respectively coupled to one of the first pads and one of the third pads. A second bonding wire has two terminals respectively coupled to one of the third pads and one of the second pads.

Aspects of the subject disclosure may include, for example, an Integrated Circuit (IC) assembly. The assembly includes a first die including a first stack of insulating layers having a first overall thickness. The first die further includes a first through-device via configured to provide a first conductive path therethrough. The IC assembly further includes a second die affixed to the first die in a stacked arrangement, the second die including a second stack of insulating layers having a second overall thickness. The second die further includes a second through-device via configured to provide a second conductive path extending therethrough. The second through-device via is electrically coupled to the first through-device via to obtain a through-assembly via configured to provide a through-assembly conductive path extending from the upper surface of the first die to the lower surface of the second die. Other embodiments are disclosed.

An integrated circuit (IC) package includes a molding having a first surface and a second surface, the first surface opposing the second surface. An interconnect is encased in the molding. The interconnect includes pads situated at a periphery of a side of the IC package. A portion of the pads are exposed at the first surface of the molding. A die pad is situated proximal to the second surface of the molding. The die pad has a first surface and a second surface, the first surface opposing the second surface, and the second surface is circumscribed by the second surface of the molding. A die is mounted on the first surface of the die pad. A heat spreader is mounted on the second surface of the molding and the second surface of the die pad. The heat spreader extends between edges of the second surface of the molding.

A device including a substrate having a first aperture, a second aperture and a third aperture. Where a bottom surface of the first and second covers may be bonded to the top surface of substrate to cover the first and second apertures, respectively, and with first and second leads bonded to the bottom surface of the first and second covers, respectively, so the first and second leads extend through the first and second apertures, respectively. The top surface of a third cover may be bonded to the bottom surface of the substrate to cover the third aperture. The bottom portion of a seal ring may be bonded to the top portion of the substrate to surround the first, second, and third apertures, and a cap may be bonded to the top portion of the seal ring. The components may be bonded to create hermetic seals for an SMD package.

An integrated circuit (IC) package includes a molding having a first surface and a second surface, the first surface opposing the second surface. An interconnect is encased in the molding. The interconnect includes pads situated at a periphery of a side of the IC package. A portion of the pads are exposed at the first surface of the molding. A die pad is situated proximal to the second surface of the molding. The die pad has a first surface and a second surface, the first surface opposing the second surface, and the second surface is circumscribed by the second surface of the molding. A die is mounted on the first surface of the die pad. A heat spreader is mounted on the second surface of the molding and the second surface of the die pad. The heat spreader extends between edges of the second surface of the molding.

An artificial intelligence (AI) chip includes a circuit substrate, a routing layer, and a system-on-chip (SOC). The routing layer is formed on a surface of the circuit substrate and includes multiple bump pads and multiple traces connecting SOC PHY bumps and substrate bumps. The disclosure utilizes advanced packaging to increase the number of signal lines, prompting appropriate changes in SOC planning to meet requirements of modern AI chips for high capacity and bandwidth, while effectively controlling costs. The SOC includes several DRAM interface physical structures (PHY), and the DRAM interface PHYs are electrically coupled to external devices through the routing layer to simultaneously receive signals from the external devices. The routing layer may be a fanout circuit layer.

A semiconductor package comprises a lead frame, two or more low side field-effect transistors (FETs), two or more high side FETs, two or more metal clips, a metal slug, an integrated circuit (IC) controller, and a molding encapsulation. A method for fabricating a semiconductor package comprising the steps of providing a lead frame comprising die paddles; attaching transistors to the die paddles respectively; mounting metal clips; mounting a metal slug and a controller, applying bonding wires; forming a molding encapsulation; and applying a singulation process.