An electronic device made from the method of providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, laser bending the shaped metallic interconnects; and transferring the shaped metallic interconnects onto a receiving substrate or device.

An embodiment of a transistor die includes a semiconductor substrate a drain region, a channel region, a drain terminal, and a conductive gate tap. The conductive gate tap includes a distal end that is coupled to a gate structure over the channel region. A first segment of the drain region is adjacent to the distal end of the gate tap. The drain terminal includes a drain runner formed from one or more portions of the patterned conductive layers. A plurality of drain pillars electrically connects the drain runner to second and third segments of the drain region, and a plurality of second drain pillars electrically connect the drain runner and the third drain region segment. The build-up structure over the second drain region segment between the first and second drain pillars is devoid of electrical connections between the drain runner and the drain region.

After a contact component is disposed in a concave joint space, when a solder solidifies, the solder thickness of the solder in the joint space is kept. Thus, a contact area between the contact component and the solder is kept, and the solder thickness of the solder that joins the contact component and a conductive pattern is kept. In addition, since an appropriate amount of the solder is kept in the joint space, an extra amount of solder does not need to be applied in advance. As a result, there is prevented creeping up of the solder into a hollow hole of the contact component, caused by the heat applied when the contact component is joined to the conductive pattern.

An integrated circuit structure and a chip are provided. The chip includes a first pad set, a second pad set, a connection circuit, and a signal pad set. The first pad set includes a plurality of first pads. The second pad set includes a plurality of second pads respectively corresponding in position to the first pads. Each of the first pads and the corresponding second pad are electrically coupled to each other through the connection circuit so as to be operable by choosing one therefrom. The signal pad set arranged between the first pad set and the second pad set and includes a plurality of signal pads.

A light source module according to an embodiment includes: a flexible printed circuit board that has first and second pads; and a plurality of light emitting chips that are arranged on the first pads of the flexible printed circuit board, respectively, wherein the plurality of light emitting chips include a plurality of first arrays that are arranged in a first direction and second arrays that are arranged in a second direction that is different from the first direction, at least two of light emitting chips in each first array are connected to each other by the flexible printed circuit board, light emitting chips in each second array are electrically isolated from each other, the light source module further includes connection members, each of which is connected to at least one of the light emitting chips of the second array and a corresponding second pad of the flexible printed circuit board, and the connection members extend in the second direction.

An electronic device made from the method of providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, laser bending the shaped metallic interconnects; and transferring the shaped metallic interconnects onto a receiving substrate or device.

A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ L shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

This transformer chip includes an element insulating layer and a high-voltage coil and a low-voltage coil embedded in the element insulating layer. The high-voltage coil includes a first end face facing the low-voltage coil side in the z-direction, a second end face opposite the first end face, and a first side face. The element insulating layer includes a third insulating layer, a second insulating layer laminated on the third insulating layer and having a higher relative dielectric constant than the third insulating layer, and a first insulating layer laminated on the second insulating layer and having a lower relative dielectric constant than the second insulating layer. The high-voltage coil is provided within the first insulating layer with the first end face in contact with the second insulating layer.

Monochromatic photosensitive devices (MPDs) having series connected photosensitive diode cell arrays in two configurations are disclosed. The MPDs employ a protection diode to bypass either one or multiple photosensitive diodes in each photosensitive diode cell should a photosensitive diode fail as an open circuit or become blocked from the monochromatic light. The protection diode is vertically (epitaxial growth direction) integrated with a photosensitive diode layer structure during epitaxial growth, thereby permitting monolithic fabrication of the one or multiple photosensitive diode cells. The bulk of the one or multiple photosensitive diodes are formed of a material having a bandgap corresponding to the wavelength of the monochromatic light, while the protection diodes are formed of a material having a bandgap greater than the wavelength of the monochromatic light. The monochromatic light passes through the protection diode before being absorbed by the one or multiple photosensitive diodes.