A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

A light source module according to an embodiment includes: a flexible printed circuit board that has first and second pads; and a plurality of light emitting chips that are arranged on the first pads of the flexible printed circuit board, respectively, wherein the plurality of light emitting chips include a plurality of first arrays that are arranged in a first direction and second arrays that are arranged in a second direction that is different from the first direction, at least two of light emitting chips in each first array are connected to each other by the flexible printed circuit board, light emitting chips in each second array are electrically isolated from each other, the light source module further includes connection members, each of which is connected to at least one of the light emitting chips of the second array and a corresponding second pad of the flexible printed circuit board, and the connection members extend in the second direction.

Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ L shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ L shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

A semiconductor device includes a conductive base, a first chip and a second chip that are mounted on the base, and a first bonding wire that electrically connects the first chip to the second chip and transmits a high frequency signal. The base has a first opening extending through the base in a thickness direction of the base and overlapping at least a part of the first bonding wire with no conductor layer interposed between the first opening and the at least a part of the first bonding wire as viewed in the thickness direction of the base.

A power module with a circuit carrier. The circuit carrier includes a carrier substrate and an electrical insulation layer. The circuit carrier has a first conductor structure with an external contact region and at least one second conductor structure with at least one external contact region and a further, third conductor structure which includes at least one external contact region. Semiconductor components are arranged on the circuit carrier individually or in groups. Current-conducting components T+ bridge and T bridge are arranged in a multifunctional frame assigned to the power module, which components are electrically connected to the semiconductor components installed in the power module individually or in groups by at least one solder connection by including a spacer.

According to one embodiment, a semiconductor device has a first terminal, and a second terminal in which a first groove portion is formed through an upper face thereof. Also, the semiconductor device has a first transistor that has a first drain electrode electrically connected to the first terminal, a first source electrode, and a nitride semiconductor layer, and is provided in the first groove portion. Further still, the semiconductor device includes a second transistor that has a second drain electrode electrically connected to the second terminal and a second source electrode electrically connected to the first source electrode.

A semiconductor package according to the present disclosure includes: a plurality of semiconductor chips that include a system on chip (SoC) in which a plurality of integrated circuits including a processor core and a microcomputer are integrated on a single chip; a power management integrated circuit (IC) for performing power management on the plurality of semiconductor chips; a plurality of shunt resistors each of which is mounted in series on a different one of power wires connecting the power management IC and the plurality of semiconductor chips; two output terminals; and a single selector that outputs voltages at both ends of a shunt resistor to an outside via the two output terminals, the shunt resistor being selected from among the plurality of shunt resistors. The power management IC, the plurality of semiconductor chips, the plurality of shunt resistors, and the single selector are mounted inside a single package.