Embodiments of the present invention disclose a computer system having a plurality of quantum circuits arranged in a two-dimensional plane-like structure, the quantum circuits comprising qubits and busses (i.e., qubit-qubit interconnects), and a method of formation therefor. A quantum computer system comprises a plurality of quantum circuits arranged in a two-dimensional pattern. At least one interior quantum circuit, not along the perimeter of the two-dimensional plane of the plurality of quantum circuits, contains a bottom chip, a device layer, a top chip, and a routing layer. A signal wire connects the device layer to the routing layer, wherein the signal wire breaks the two dimensional plane, for example, the signal wire extends into a different plane.

A multi-chip package includes a package substrate including a first substrate pad, a first group of semiconductor chips stacked on the package substrate, each of the first group of the semiconductor chips including bonding pads, first stud bumps arranged on the bonding pads of the first group of the semiconductor chips except for a lowermost semiconductor chip in the first group, a first conductive wire downwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and connected to the first substrate pad, and a second conductive wire upwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and sequentially connected to the first stud bumps.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.

A multi-chip package includes a package substrate including a first substrate pad, a first group of semiconductor chips stacked on the package substrate, each of the first group of the semiconductor chips including bonding pads, first stud bumps arranged on the bonding pads of the first group of the semiconductor chips except for a lowermost semiconductor chip in the first group, a first conductive wire downwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and connected to the first substrate pad, and a second conductive wire upwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and sequentially connected to the first stud bumps.

The present invention relates to an electronic device, comprising a fingerprint sensor configured to capture an image of a fingerprint of a finger positioned on a sensor surface of the fingerprint sensor, the fingerprint sensor comprising a sensing array comprising a plurality of sensing elements, and connection pads for electrical connection to external fingerprint sensor control circuitry; and a protective plate for protecting the fingerprint sensor, the protective plate comprising conductive traces for connecting the fingerprint sensor to the external fingerprint sensor control circuitry, wherein the fingerprint sensor is attached to an underside of the protective plate and wherein the connection pads of the fingerprint sensor are mechanically and electrically connected to the conductive traces of the protective plate.

A multi-chip package includes a package substrate including a first substrate pad, a first group of semiconductor chips stacked on the package substrate, each of the first group of the semiconductor chips including bonding pads, first stud bumps arranged on the bonding pads of the first group of the semiconductor chips except for a lowermost semiconductor chip in the first group, a first conductive wire downwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and connected to the first substrate pad, and a second conductive wire upwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and sequentially connected to the first stud bumps.

A package structure and a method are provided. The package structure includes: a die pad; a plurality of discrete leads disposed on either side of or around the die pad, wherein each of the leads includes an upper surface and a lower surface, a trench extending through a portion of the lower surface and a portion of an outer sidewall surface of a lead being formed in a region, away from the die pad, of the lead, a lateral hole being formed in the lead on a side surface of the trench, the lateral hole communicating with the trench to form a step; a first molding layer filling the gaps between the leads and the die pad; a semiconductor chip disposed on an upper surface of the die pad; and a second molding layer disposed on an upper surface of the first molding layer, the lead, and the die pad.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).