A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of 55 C. or lower, and a needle penetration of 30 to 50 after storage at 175 C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.

A case (6) surrounds a semiconductor chip (5). A case electrode (7) is attached to an upper face of the case (6). A wire (8) is connected to the semiconductor chip (5) and the case electrode (7). A first holding portion (10) presses down the case electrode (7) on the upper face of the case (6) outside a joint portion where the wire (8) is bonded to the case electrode (7). A second holding portion (11) presses down the case electrode (7) on the upper face of the case (6) inside the joint portion. A recess (12) is formed on the upper face of the case (6). The case electrode (7) is bent such as to fit into the recess (12). The second holding portion (11) is disposed inside the recess (12).

A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

A bonding structure and a power device. The bonding structure includes a first power unit and at least two bonding wires. At least one end of the bonding wire is connected to the first power unit through bonding. Projections that are of lead paths of the at least two bonding wires and that are on a preset plane have at least one intersection point. Spatial cross wire bonding is performed on the bonding wires, so that lead paths of the bonding wires form an angle with each other, thereby weakening electromagnetic force between the bonding wires. Therefore, fatigue due to fluctuating stress of the bonding wires can be alleviated, service lives of the bonding wires can be prolonged, and bonding effect can be ensured to a maximum extent.

Power semiconductor packages described herein each include a substrate having two or more metal layers and one or more insulating layers for separating the metal layers. The substrate insulating layers are formed from a polymer material to reduce the CTE mismatch between the substrate metal layers and the substrate insulating layers.

A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of 55 C. or lower, and a needle penetration of 30 to 50 after storage at 175 C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.

A light-emitting device includes first and second light-emitting elements, first and second support members bonded to the first and second light-emitting elements, respectively, first and second protective elements, and a plurality of wirings including: a first wiring with one end being bonded to the first light-emitting element or the first support member; a second wiring with one end being bonded to the first light-emitting element or the first support member and the other end being bonded to the second light-emitting element or the second support member; a third wiring with one end being bonded to the first protective element or a support member equipped with the first protective element; and a fourth wiring with one end being bonded to the second protective element or a support member equipped with the second protective element.

In an embodiment of the present invention, a load sensor package includes a housing having a cap, a column, a peripheral structure, and a base. The base includes a major surface configured to mount a stress sensor, while the cap includes a cap major surface configured to receive a load to be measured. The column is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor. The peripheral structure is configured to transfer the remaining fraction of the load to be measured to the base.

A structure of a printed circuit board and a carrier is coupled with a chip, and the printed circuit board contains: a trace, and a dielectric layer. The carrier includes at least an element. The trace at least includes a terminal; the trace has an upper surface, a lower surface, and a side edge, the dielectric layer includes a predetermined opening, an upper surface, a lower surface, and a side edge, wherein the predetermined opening is formed by a portion of the dielectric layer and corresponds to the terminal of the trace. And the carrier is coupled with the dielectric layer.

A power apparatus (1, 2) includes a substrate (10, 10), a first power component (20), a second power component (30), and a connection board (40, 40). The substrate (10, 10) includes a first area (11) and a second area (12) separated from each other. The first power component (20) is arranged on the first area (11). The second power component (30) is arranged on the second area (12). The connection board (40, 40) is arranged between the first area (11) and the second area (12), and is electrically connected to the first power component (20) and the second area (12) respectively.